586 research outputs found
Anomalous spin-splitting of two-dimensional electrons in an AlAs Quantum Well
We measure the effective Lande g-factor of high-mobility two-dimensional
electrons in a modulation-doped AlAs quantum well by tilting the sample in a
magnetic field and monitoring the evolution of the magnetoresistance
oscillations. The data reveal that |g| = 9.0, which is much enhanced with
respect to the reported bulk value of 1.9. Surprisingly, in a large range of
magnetic field and Landau level fillings, the value of the enhanced g-factor
appears to be constant.Comment: 4 pages, 3 figure
Apparent Metallic Behavior at B = 0 of a two-dimensional electron system in AlAs
We report the observation of metallic-like behavior at low temperatures and
zero magnetic field in two dimensional (2D) electrons in an AlAs quantum well.
At high densities the resistance of the sample decreases with decreasing
temperature, but as the density is reduced the behavior changes to insulating,
with the resistance increasing as the temperature is decreased. The effect is
similar to that observed in 2D electrons in Si-MOSFETs, and in 2D holes in SiGe
and GaAs, and points to the generality of this phenomenon
Highly anisotropic g-factor of two-dimensional hole systems
Coupling the spin degree of freedom to the anisotropic orbital motion of
two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman
splitting with respect to different orientations of an in-plane magnetic field
B relative to the crystal axes. This mechanism has no analogue in the bulk band
structure. We obtain good, qualitative agreement between theory and
experimental data, taken in GaAs 2D hole systems grown on (113) substrates,
showing the anisotropic depopulation of the upper spin subband as a function of
in-plane B.Comment: 4 pages, 3 figure
Interactions in high-mobility 2D electron and hole systems
Electron-electron interactions mediated by impurities are studied in several
high-mobility two-dimensional (electron and hole) systems where the parameter
changes from 0.1 to 10 ( is the momentum relaxation
time). This range corresponds to the \textit{intermediate} and \textit
{ballistic} regimes where only a few impurities are involved in
electron-electron interactions. The interaction correction to the Drude
conductivity is detected in the temperature dependence of the resistance and in
the magnetoresistance in parallel and perpendicular magnetic fields. The
effects are analysed in terms of the recent theories of electron interactions
developed for the ballistic regime. It is shown that the character of the
fluctuation potential (short-range or long-range) is an important factor in the
manifestation of electron-electron interactions in high-mobility 2D systems.Comment: 22 pages, 11 figures; to appear in proceedings of conference
"Fundamental Problems of Mesoscopic Physics", Granada, Spain, 6-11 September,
200
Engineering of quantum dot photon sources via electro-elastic fields
The possibility to generate and manipulate non-classical light using the
tools of mature semiconductor technology carries great promise for the
implementation of quantum communication science. This is indeed one of the main
driving forces behind ongoing research on the study of semiconductor quantum
dots. Often referred to as artificial atoms, quantum dots can generate single
and entangled photons on demand and, unlike their natural counterpart, can be
easily integrated into well-established optoelectronic devices. However, the
inherent random nature of the quantum dot growth processes results in a lack of
control of their emission properties. This represents a major roadblock towards
the exploitation of these quantum emitters in the foreseen applications. This
chapter describes a novel class of quantum dot devices that uses the combined
action of strain and electric fields to reshape the emission properties of
single quantum dots. The resulting electro-elastic fields allow for control of
emission and binding energies, charge states, and energy level splittings and
are suitable to correct for the quantum dot structural asymmetries that usually
prevent these semiconductor nanostructures from emitting polarization-entangled
photons. Key experiments in this field are presented and future directions are
discussed.Comment: to appear as a book chapter in a compilation "Engineering the
Atom-Photon Interaction" published by Springer in 2015, edited by A.
Predojevic and M. W. Mitchel
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