Correlated subgrain and particle analysis of a recovered Al-Mn alloy by directly combining EBSD and backscatter electron imaging

Correlated analysis of (sub)grains and particles in alloys is important to understand transformation processes and control material properties. A multimodal data fusion workflow directly combining subgrain data from electron backscatter diffraction (EBSD) and particle data from backscatter electron (BSE) images in the scanning electron microscope is presented. The BSE images provide detection of particles smaller than the applied step size of EBSD down to 0.03 $\mu$m in diameter. The workflow is demonstrated on a cold-rolled and recovered Al-Mn alloy, where constituent particles formed during casting and dispersoids formed during subsequent heating affect recovery and recrystallization upon annealing. The multimodal dataset enables statistical analysis including subgrains surrounding constituent particles and dispersoids' location with respect to subgrain boundaries. Among the subgrains of recrystallization texture, Cube{001}\left subgrains experience an increased Smith-Zener drag from dispersoids on their boundaries compared to CubeND{001}\left and P{011}\left subgrains, with the latter experiencing the lowest drag. Subgrains at constituent particles are observed to have a growth advantage due to a lower dislocation density and higher boundary misorientation angle. The dispersoid size per subgrain boundary length increases as a function of misorientation angle. The workflow should be applicable to other alloy systems where there is a need for analysis correlating grains and grain boundaries with secondary phases smaller than the applied EBSD step size but resolvable by BSE imaging

Orientation dependent pinning of (sub)grains by dispersoids during recovery and recrystallization in an Al-Mn alloy

The recrystallized grain size and texture in alloys can be controlled via the microchemistry state during thermomechanical processing. The influence of concurrent precipitation on recovery and recrystallization is here analyzed by directly correlating (sub)grains of P, CubeND or Cube orientation with second-phase particles in a cold-rolled and non-isothermally annealed Al-Mn alloy. The recrystallized state is dominated by coarse elongated grains with a strong P, weaker CubeND and even weaker Cube texture. The correlated data enables orientation dependent quantification of the density and size of dispersoids on sub-boundaries and subgrains in the deformation zones around large constituent particles. A new modified expression for the Smith-Zener drag from dispersoids on sub-boundaries is derived and used. The results show that the drag on (sub)grain boundaries from dispersoids is orientation dependent, with Cube subgrains experiencing the highest drag after recovery and partial recrystallization. The often observed size advantage of Cube subgrains in Al alloys is not realized due to the increased drag, thereby promoting particle-stimulated nucleation (PSN). Relatively fewer and larger dispersoids in deformation zones around large particles give a reduced Smith-Zener drag on PSN nuclei, thus further strengthening the effect of PSN. Observations substantiating the stronger P texture compared to the CubeND texture are a higher frequency of P subgrains and a faster growth of these subgrains. The applied methodology enables a better understanding of the mechanisms behind the orientation dependent nucleation and growth behavior during recovery and recrystallization with strong concurrent precipitation in Al-Mn alloys. In particular, the methodology gives new insights into the strong P and CubeND textures compared to the Cube texture

Characterization of ferroelectric domain walls by scanning electron microscopy

Ferroelectric domain walls are a completely new type of functional interface, which have the potential to revolutionize nanotechnology. In addition to the emergent phenomena at domain walls, they are spatially mobile and can be injected, positioned, and deleted on demand, giving a new degree of flexibility that is not available at conventional interfaces. Progress in the field is closely linked to the development of modern microscopy methods, which are essential for studying their physical properties at the nanoscale. In this article, we discuss scanning electron microscopy (SEM) as a powerful and highly flexible imaging technique for scale-bridging studies on domain walls, continuously covering nano- to mesoscopic length scales. We review seminal SEM experiments on ferroelectric domains and domain walls, provide practical information on how to visualize them in modern SEMs, and provide a comprehensive overview of the models that have been proposed to explain the contrast formation in SEM. Going beyond basic imaging experiments, recent examples for nano-structuring and correlated microscopy work on ferroelectric domain walls are presented. Other techniques, such as 3D atom probe tomography, are particularly promising and may be combined with SEM in the future to investigate individual domain walls, providing new opportunities for tackling the complex nanoscale physics and defect chemistry at ferroelectric domain walls

Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor–liquid–solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells