Capacity formulas in MWPC: some critical reflexions

An approximate analytical expression for "capacitance" of MWPC configurations circulates in the literature since decades and is copied over and over again. In this paper we will try to show that this formula corresponds to a physical quantity that is different from what it is usually thought to stand for

Off line Parallax Correction for Neutral Particle Gas Detectors

In a neutral particle gas detector, the parallax error resulting from the perpendicular projection on the detection plane or wire of the radial particle trajectories emanating from a point like source (such as a scattering sample) can significantly spoil the apparent angular resolution of the detector. However, as we will show, the information is not lost. We propose an off line data treatment to restore as much as possible the original scattering information in the case of a one-dimensional parallax effect. The reversibility of parallax follows from the algebraic structure of this effect, which is different from the resolution loss which is essentially irreversible. The interplay between finite resolution and parallax complicates the issue, but this can be resolved

Study of a high spatial resolution 10B-based thermal neutron detector for application in neutron reflectometry: the Multi-Blade prototype

Although for large area detectors it is crucial to find an alternative to detect thermal neutrons because of the 3He shortage, this is not the case for small area detectors. Neutron scattering science is still growing its instruments' power and the neutron flux a detector must tolerate is increasing. For small area detectors the main effort is to expand the detectors' performances. At Institut Laue-Langevin (ILL) we developed the Multi-Blade detector which wants to increase the spatial resolution of 3He-based detectors for high flux applications. We developed a high spatial resolution prototype suitable for neutron reflectometry instruments. It exploits solid 10B-films employed in a proportional gas chamber. Two prototypes have been constructed at ILL and the results obtained on our monochromatic test beam line are presented here

Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain

We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As.Comment: 5 pages, 4 figures; v2: missing references included, figures recompressed to improve readabilit

Hole spin polarization in GaAlAs:Mn structures

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.Comment: 4 page

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

The effect of annealing at 250 C on the carrier depth profile, Mn distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As layers with thicknesses > 200 nm, grown by molecular-beam epitaxy at low temperatures, is studied by a variety of analytical methods. The vertical gradient in hole concentration, revealed by electrochemical capacitance-voltage profiling, is shown to play a key role in the understanding of conductivity and magnetization data. The gradient, basically already present in as-grown samples, is strongly influenced by post-growth annealing. From secondary ion mass spectroscopy it can be concluded that, at least in thick layers, the change in carrier depth profile and thus in conductivity is not primarily due to out-diffusion of Mn interstitials during annealing. Two alternative possible models are discussed.Comment: 8 pages, 8 figures, to appear in Phys. Rev.