A SIMPLE TECHNIQUE FOR CZOCHRALSKI GROWTH OF GASB SINGLE-CRYSTALS FROM SCUM-FREE MELT

A simple technique for synthesis and growth of GaSb crystals from a scum-free melt has been developed. The key element in this technique is the chemical and thermal treatment of gallium in vacuum before growth. This technique does not require the use of a pure hydrogen ambient nor the two-step process nor the double-crucible technique. Undoped and Te-doped 25 mm diameter GaSb single crystals of orientation have been successfully grown by this technique with typical carrier concentrations of 1.0 x 10(17) cm(-3) and mobility of 717 cm(2)/V(.)s for undoped samples.1514167191

Measurement of refractive index of GaSb (1.8 to 2.56 mu m) using a prism

The authors have measured the refractive index of GaSb for the transparent region from 1.8 to 2.56 mu m using refraction in a prism. The values obtained agree well. with those recently measured by the authors using ellipsometry. A good fit to the experimental data is obtained using the single oscillator model.32326226