Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires

International audienc

Modulation of Schottky Barrier Height by Nitrogen Doping and Its Influence on Responsivity of Monolayer MoS2 Photodetector

Abstract Monolayer MoS2 flakes are prepared by low‐pressure chemical vapor deposition on p‐type and n‐type silicon substrates and post‐treated under nitrogen (N2)‐rich conditions to incorporate nitrogen atoms in sulfur vacancies. Ultraviolet photoelectron spectroscopy (UPS) shows an increase in work function value by 0.47 eV and 0.53 eV compared to undoped MoS2 when grown on p and n‐type substrates, respectively. Photodetection experiments conducted for doped and undoped MoS2 grown on p‐type substrate reveal a decrease in the value of photo responsivity for N2 doped MoS2 (191 A W−1) compared with undoped MoS2 (572 A W−1). Also, MoS2 crystals grown and doped on an n‐type substrate display an important enhancement of the photoresponsivity from 63 A W−1 for undoped to 606 A W−1 for N2 doped MoS2. The modulation of Schottky barrier height for N2 doped MoS2 on p type substrate decreased whereas for n type substrate the high electric field created due to the difference in the Fermi level allows for greater separation of photogenerated charge carriers. This modulation in the photoresponsivity due to the selection of the type of substrate opens up new avenues of research and engineering of atomically thin optoelectronic devices

Thermal characterization of MoS2 mono/few layers using Scanning Thermal Microscopy

International audienc

Leitfaden zur qualitätssicheren Aktenführung nach DIN ISO-15489-1 erschienen

Der Arbeitskreis Schriftgutverwaltung im DIN NABD 15 als verantwortliches Normungsgremium zur Schriftgutverwaltung/ Records Management in Deutschland hat einen Leitfaden zur qualitätssicheren Aktenführung nach DIN ISO-15489-1 veröffentlicht. Dies zeigt prägnant die rechtlichen und fachlichen Rahmenbedingungen, Verantwortlichkeiten und Prozesse sowie notwendigen Schritte zur geeigneten IT-Unterstützung auf. Ergänzt um eine umfangreiche Literaturliste kann der Leitfaden als guter Einstieg in di..

Hybrid MoS 2 -gap-mode metasurface photodetectors

International audienc

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution