An impact ionization model for optically-triggered current filaments in GaAs

A new impact ionization theory is proposed for current filaments in optically triggered semi-insulating (SI) GaAs switches. The theory explains the rapid switching and lock-on voltage observed in these switches in terms of hot carriers which become more effective at impact ionization at higher carrier densities. The theory is implemented by hydrodynamic transport equations which include kinetic terms for hot carriers and hot phonons. The solutions of these equations are in good agreement with current versus voltage data for optically triggered GaAs switches

Diamond switches for high temperature electronics

This paper presents the results of switching voltages of 500 V and currents of 10 A using chemical vapor deposited (CVD) diamond as a switching material. The switching is performed by using an electron beam that penetrates the diamond, creates electron hole pairs, and lowers its resistivity to about 20 {Omega}-cm and its resistance to about 4 {Omega}. Tests were performed at room temperature but in a configuration that allows for 250 C

GaAs Photoconductive Closing Switches with High Dark Resistance and Microsecond Conductivity Decay

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors\u27 experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm2 were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on\u27 effect was observed

Rise Time and Recovery of GaAs Photoconductive Semiconductor Switches

Fast rise time applications have encouraged us to look at the rise time dependences of lock-on switching. Our tests have shown rise time and delay effects which decrease dramatically with increasing electric field across the switch and/or optical energy used in activating lock-on. Interest in high repetition rate photoconductive semiconductor switches (PCSS), which require very little trigger energy (our 1.5-cm long switches have been triggered with as little as 20 {mu}J), has also led us to investigate recovery from lock-on. Several circuits have been used to induce fast recovery, the fastest being 30 ns. The most reliable circuit produced a 4-pulse burst of +/{minus} 10-kV pulses at 7 MHz with 100-{mu}J trigger energy per pulse. 11 refs., 10 figs

A compact, short-pulse laser for near-field, range-gated imaging

This paper describes a compact laser, which produces high power, wide-angle emission for a near-field, range-gated, imaging system. The optical pulses are produced by a 100 element laser diode array (LDA) which is pulsed with a GaAs, photoconductive semiconductor switch (PCSS). The LDA generates 100 ps long, gain-switched, optical pulses at 904 nm when it is driven with 3 ns, 400 A, electrical pulses from a high gain PCSS. Gain switching is facilitated with this many lasers by using a low impedance circuit to drive an array of lasers, which are connected electrically in series. The total optical energy produced per pulse is 10 microjoules corresponding to a total peak power of 100 kW. The entire laser system, including prime power (a nine volt battery), pulse charging, PCSS, and LDA, is the size of a small, hand-held flashlight. System lifetime, which is presently limited by the high gain PCSS, is an active area of research and development. Present limitations and potential improvements will be discussed. The complete range-gated imaging system is based on complementary technologies: high speed optical gating with intensified charge coupled devices (ICCD) developed at Los Alamos National Laboratory (LANL) and high gain, PCSS-driven LDAs developed at Sandia National Laboratories (SNL). The system is designed for use in highly scattering media such as turbid water or extremely dense fog or smoke. The short optical pulses from the laser and high speed gating of the ICCD are synchronized to eliminate the back-scattered light from outside the depth of the field of view (FOV) which may be as short as a few centimeters. A high speed photodiode can be used to trigger the intensifier gate and set the range-gated FOV precisely on the target. The ICCD and other aspects of the imaging system are discussed in a separate paper

The sequence of rice chromosomes 11 and 12, rich in disease resistance genes and recent gene duplications

Background: Rice is an important staple food and, with the smallest cereal genome, serves as a reference species for studies on the evolution of cereals and other grasses. Therefore, decoding its entire genome will be a prerequisite for applied and basic research on this species and all other cereals. Results: We have determined and analyzed the complete sequences of two of its chromosomes, 11 and 12, which total 55.9 Mb (14.3% of the entire genome length), based on a set of overlapping clones. A total of 5,993 non-transposable element related genes are present on these chromosomes. Among them are 289 disease resistance-like and 28 defense-response genes, a higher proportion of these categories than on any other rice chromosome. A three-Mb segment on both chromosomes resulted from a duplication 7.7 million years ago (mya), the most recent large-scale duplication in the rice genome. Paralogous gene copies within this segmental duplication can be aligned with genomic assemblies from sorghum and maize. Although these gene copies are preserved on both chromosomes, their expression patterns have diverged. When the gene order of rice chromosomes 11 and 12 was compared to wheat gene loci, significant synteny between these orthologous regions was detected, illustrating the presence of conserved genes alternating with recently evolved genes. Conclusion: Because the resistance and defense response genes, enriched on these chromosomes relative to the whole genome, also occur in clusters, they provide a preferred target for breeding durable disease resistance in rice and the isolation of their allelic variants. The recent duplication of a large chromosomal segment coupled with the high density of disease resistance gene clusters makes this the most recently evolved part of the rice genome. Based on syntenic alignments of these chromosomes, rice chromosome 11 and 12 do not appear to have resulted from a single whole-genome duplication event as previously suggested

Clinical practice: Breastfeeding and the prevention of allergy

The increase in allergic disease prevalence has led to heightened interest in the factors determining allergy risk, fuelled by the hope that by influencing these factors one could reduce the prevalence of allergic conditions. The most important modifiable risk factors for allergy are maternal smoking behaviour and the type of feeding. A smoke-free environment for the child (to be), exclusive breastfeeding for 4–6 months and the postponement of supplementary feeding (solids) until 4 months of age are the main measures considered effective. There is no place for restricted diets during pregnancy or lactation. Although meta-analyses suggest that hypoallergenic formula after weaning from breastfeeding grants protection against the development of allergic disease, the evidence is limited and weak. Moreover, all current feeding measures aiming at allergy prevention fail to show effects on allergic manifestations later in life, such as asthma. In conclusion, the allergy preventive effect of dietary interventions in infancy is limited. Counselling of future parents on allergy prevention should pay attention to these limitations

Longevity of optically activated, high gain GaAs photoconductive semiconductor switches

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to well over 10 million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The first was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. The authors reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of {approximately}2 kV. At currents of {approximately}70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort the authors measured a carrier density of 6 x 10{sup 18} electrons (or holes)/cm{sup 3} in filaments that carry a current of 5 A

High gain GaAs photoconductive semiconductor switches: Switch longevity

Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A