8 research outputs found

    Self-Polarization in Epitaxial Fully Matched Lead-Free Bismuth Sodium Titanate Based Ferroelectric Thin Films

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    The Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-based ferroelectric is one of the most promising candidates for environment-friendly lead-free ferroelectric/piezoelectric materials for various applications such as actuators and micro-electromechanical systems. The understanding and tailoring of the ferro-(piezo-)­electric properties of thin films, however, are strongly hindered by the formation of the defects such as dislocations, ion vacancies in the film, as well as by the complexity of the interface between the film and the substrate. An ideal system for the study of the polarization behavior in the ferro-(piezo-)­electric film would be a fully matched system. In this work, monocrystalline 0.89Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>–0.11BaTiO<sub>3</sub> thin films were epitaxially grown on (001)-oriented Nb-doped SrTiO<sub>3</sub> substrates using a sol–gel technique. The films were almost fully lattice- and thermally matched with the substrate, thus avoiding the impact of dislocations and thermal stress. The films were self-poled by a built-in electric field, originating from the sedimentation of heavier atoms during the film preparation. As a consequence, an upward self-polarization was introduced into the films, giving rise to asymmetric phase hysteresis loops and domain switching current responses. These results highlight the importance of the interface complexity for the self-polarization of piezoelectric thin films, even for fully matched films, which will therefore facilitate the control of properties of piezoelectric films and their applications for various functional devices

    Recoverable Self-Polarization in Lead-Free Bismuth Sodium Titanate Piezoelectric Thin Films

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    Bismuth sodium titanate, Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> (BNT), is a promising lead-free ferroelectric material. However, its potential applications have not been fully explored, mainly because of the complex domain structure arising from its intricate phase transitions. A deep and thorough study of its domain structure and polarization switching behavior will greatly help with understanding the polarization nature and with promoting future applications. In this work, we demonstrate that BNT polycrystalline films possess a highly ordered out-of-plane polarization (self-polarization) and randomly oriented in-plane polarizations. Interestingly, the inherent nature of polarization in the BNT films does not allow for the nonvolatile domain writing, as the switched polarization spontaneously and rapidly reverses to the initial orientation state once the external poling electric field is removed, making the self-polarization recoverable. Such a stable self-polarization vanishes gradually with temperature increasing over 150 °C but starts to recover to its initial state upon cooling down to 250 °C, and entirely recovers once the temperature is reduced to below 200 °C. Such interesting properties of BNT films are attributed to the combined effects of the free charges at the Pt electrode, (detected) cation vacancies at the oxide/Pt interface and the defects in oxide lattices. Our results make a step closer to fully understand the nature of polarization and related piezoelectricity in BNT. Such films with recoverable self-polarization are of great interest for applications as sensors, actuators, and transducers that can operate particularly under high temperatures and high electric field conditions

    Large Piezoelectric Strain with Superior Thermal Stability and Excellent Fatigue Resistance of Lead-Free Potassium Sodium Niobate-Based Grain Orientation-Controlled Ceramics

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    Environment-friendly lead-free piezoelectric materials with high piezoelectric response and high stability in a wide temperature range are urgently needed for various applications. In this work, grain orientation-controlled (with a 90% ⟨001⟩<sub>c</sub>-oriented texture) (K,Na)­NbO<sub>3</sub>-based ceramics with a large piezoelectric response (<i>d</i><sub>33</sub>*) = 505 pm V<sup>–1</sup> and a high Curie temperature (<i>T</i><sub>C</sub>) of 247 °C have been developed. Such a high <i>d</i><sub>33</sub>* value varies by less than 5% from 30 to 180 °C, showing a superior thermal stability. Furthermore, the high piezoelectricity exhibits an excellent fatigue resistance with the <i>d</i><sub>33</sub>* value decreasing within only by 6% at a field of 20 kV cm<sup>–1</sup> up to 10<sup>7</sup> cycles. These exceptional properties can be attributed to the vertical morphotropic phase boundary and the highly ⟨001⟩<sub>c</sub>-oriented textured ceramic microstructure. These results open a pathway to promote lead-free piezoelectric ceramics as a viable alternative to lead-based piezoceramics for various practical applications, such as actuators, transducers, sensors, and acoustic devices, in a wide temperature range

    Ferroelectric Phase Transition Induced a Large FMR Tuning in Self-Assembled BaTiO<sub>3</sub>:Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> Multiferroic Composites

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    Yttrium iron garnet (YIG) is of great importance in RF/microwave devices for its low loss, low intrinsic damping, and high permeability. Nevertheless, tuning of YIG-based multiferroics is still a challenge due to its near-zero magnetostriction and the difficulty of building epitaxial interface between ferromagnetic garnet and ferroelectric perovskite phases. In this work, the vertically aligned heterostructure of YIG:BTO/STO(001) with local epitaxial interface between BTO and YIG is well-constructed, where the single crystal BTO pillars are embedded in YIG matrix. A large magnetoelectric coupling effect that drives YIG’s FMR shift up to 512 and 333 Oe (1–2 order greater than those of all state-of-the-art progresses) is obtained through BTO ferroelectric phase changes induced by temperature variation at 295 and 193 K, correspondingly. This record high magnetoelectric tunability of YIG paves a way toward thermal/electrical tunable YIG devices

    Discovery of Enhanced Magnetoelectric Coupling through Electric Field Control of Two-Magnon Scattering within Distorted Nanostructures

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    Electric field control of dynamic spin interactions is promising to break through the limitation of the magnetostatic interaction based magnetoelectric (ME) effect. In this work, electric field control of the two-magnon scattering (TMS) effect excited by in-plane lattice rotation has been demonstrated in a La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO)/Pb­(Mn<sub>2/3</sub>Nb<sub>1/3</sub>)-PbTiO<sub>3</sub> (PMN-PT) (011) multiferroic heterostructure. Compared with the conventional strain-mediated ME effect, a giant enhancement of ME effect up to 950% at the TMS critical angle is precisely determined by angular resolution of the ferromagnetic resonance (FMR) measurement. Particularly, a large electric field modulation of magnetic anisotropy (464 Oe) and FMR line width (401 Oe) is achieved at 173 K. The electric-field-controllable TMS effect and its correlated ME effect have been explained by electric field modulation of the planar spin interactions triggered by spin–lattice coupling. The enhancement of the ME effect at various temperatures and spin dynamics control are promising paradigms for next-generation voltage-tunable spintronic devices

    Thermal Driven Giant Spin Dynamics at Three-Dimensional Heteroepitaxial Interface in Ni<sub>0.5</sub>Zn<sub>0.5</sub>Fe<sub>2</sub>O<sub>4</sub>/BaTiO<sub>3</sub>‑Pillar Nanocomposites

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    Traditional magnetostrictive/piezoelectric laminated composites rely on the two-dimensional interface that transfers stress/strain to achieve the large magnetoelectric (ME) coupling, nevertheless, they suffer from the theoretical limitation of the strain effect and of the substrate clamping effect in real ME applications. In this work, 3D NZFO/BTO-pillar nanocomposite films were grown on SrTiO<sub>3</sub> by template-assisted pulsed laser deposition, where BaTiO<sub>3</sub> (BTO) nanopillars appeared in an array with distinct phase transitions as the cores were covered by NiZn ferrite (NZFO) layer. The perfect 3D heteroepitaxial interface between BTO and NZFO phases can be identified without any edge dislocations, which allows effective strain transfer at the 3D interface. The 3D structure nanocomposites enable the strong two magnon scattering (TMS) effect that enhances ME coupling at the interface and reduces the clamping effect by strain relaxation. Thereby, a large FMR field shift of 1866 Oe in NZFO/BTO-pillar nanocomposite was obtained at the TMS critical angle near the BTO nanopillars phase transition of 255 K

    Achieving Higher Strength and Sensitivity toward UV Light in Multifunctional Composites by Controlling the Thickness of Nanolayer on the Surface of Glass Fiber

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    The interphase between fiber and matrix plays an essential role in the performance of composites. Therefore, the ability to design or modify the interphase is a key technology needed to manufacture stronger and smarter composite. Recently, depositing nanomaterials onto the surface of the fiber has become a promising approach to optimize the interphase and composites. But, the modified composites have not reached the highest strength yet, because the determining parameters, such as thickness of the nanolayer, are hardly controlled by the mentioned methods in reported works. Here, we deposit conformal ZnO nanolayer with various thicknesses onto the surfaces of glass fibers via the atomic layer deposition (ALD) method and a tremendous enhancement of interfacial shear strength of composites is achieved. Importantly, a critical thickness of ZnO nanolayer is obtained for the first time, giving rise to a maximal relative enhancement in the interfacial strength, which is more than 200% of the control fiber. In addition, the single modified fiber exhibits a potential application as a flexible, transparent, in situ UV detector in composites. And, we find the UV-sensitivity also shows a strong correlation with the thickness of ZnO. To reveal the dependence of UV-sensitivity on thickness, a depletion thickness is estimated by a proposed model which is an essential guide to design the detectors with higher sensitivity. Consequently, such precise tailoring of the interphase offers an advanced way to improve and to flexibly control various macroscopic properties of multifunctional composites of the next generation

    Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)<sub>3</sub>/Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–PbTiO<sub>3</sub> Multiferroic Heterostructures

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    One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)<sub>3</sub>/(011) Pb­(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)­O<sub>3</sub>–PbTiO<sub>3</sub> multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (Δ<i>H</i><sub>eff</sub>) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a Δ<i>H</i><sub>eff</sub> of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin–orbit coupling from Co/Pt interfacial hybridization <i>via</i> strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a Δ<i>H</i><sub>eff</sub> of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices
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