4 research outputs found
Amorphous ultra-wide bandgap ZnOx thin films deposited at cryogenic temperatures
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap
semiconductor for light emitting devices and for transparent or high
temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an
advantage in these applications. In this paper we report on X-ray amorphous
a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive
magnetron sputtering. The substrates were cooled by a nitrogen flow through the
copper substrate holder during the deposition. The films were characterized by
X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and
ellipsometry. The a-ZnOx films on glass and Ti substrates were obtained at the
substrate holder temperature of approximately -100 oC. New vibration bands at
201, 372, and 473 cm-1 as well as O-H stretch and bend absorption bands in the
a-ZnOx films were detected by FTIR spectroscopy. Raman spectra showed
characteristic ZnO2 peaks at 386 and 858 cm-1 attributed to the peroxide ion
O22- stretching and libration modes, respectively. In addition, the films
contain neutral and ionized O2 and O2- species. The a-ZnOx films are highly
transparent in the visible light range (approx. 87%) and exhibit a refractive
index of 1.68 at 2.25 eV (550 nm). An optical band gaps is 4.65 eV with an
additional band edge absorption feature at 3.50 eV. It has been shown that the
deposition on actively cooled substrates can be a suitable technique to obtain
low temperature phases that cannot be deposited at room temperature.Comment: 24 pages, 8 figure
Impact of amorphization on the electronic properties of ZnâIrâO systems
We analyze the geometry and electronic structure of a series of amorphous Zn-Ir-O systems using classical molecular dynamics followed by density functional theory taking into account two different charge states of Ir (+3 andââ+4). The structures obtained consist of a matrix of interconnected metal-oxygen polyhedra, with Zn adopting preferentially a coordination of 4 and Ir a mixture of coordinations between 4 and 6 that depend on the charge state of Ir and its concentration. The amorphous phases display reduced band gaps compared to crystalline ZnIr2O4 and exhibit localized states near the band edges, which harm their transparency and hole mobility. Increasing amounts of Ir in the Ir(4+)âphases decrease the band gap further while not altering it significantly in the Ir(3+) phases. The results are consistent with recent transmittance and resistivity measurements.This is the final version of the article. It first appeared from IOP Science via https://doi.org/10.1088/0953-8984/28/34/34550
Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
An experimental investigation was conducted to explore spectroscopic and
structural characterization of semiconducting yttrium oxide thin film deposited
at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron
sputtering. Based on the results obtained from both x-ray diffraction and
transmission electron microscope measurements, yttrium monoxide is very likely
formed in the transition region between {\beta}-Y2O3 and {\alpha}-Y2O3, and
accompanied by the crystalline Y2O3. Resulting from either the low energy
separation between 4d and 5s orbitals and/or different spin states of the
corresponding orbitals' sublevels, the stability of monoxide is most presumably
self-limited by the size of the crystal in thermodynamic terms. This behavior
develops a distortion in the structure of the crystal compared to the metal
oxide cubic structure and it also effectuates the arrangement in
nanocrystalline/amorphous phase. In addition to this, spectroscopic
ellipsometry denotes that the semiconducting yttrium oxide has the dominant,
mostly amorphous, formation character over crystalline Y2O3. Our purpose, by
means of the current findings, is to advance the understanding of formation
kinetics/conditions of yttrium with an unusual valency (2+)