Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

The damaging effect of mono- and diatomic phosphorus and arsenic ions implanted into silicon was investigated by spectroscopic ellipsometry (SE) and high-depth-resolution Rutherford backscattering and channeling techniques. A comparison was made between the two methods to check the capability of ellipsometry to examine the damage formed by room temperature implantation into silicon. For the analysis of the spectroscopic ellipsometry data we used the conventional method of assuming appropriate optical models and fitting the model parameters (layer thicknesses and volume fractions of the amorphous silicon component in the layers) by linear regression. The depth dependence of the damage was determined by both methods. It was revealed that SE can be used to investigate the radiation damage of semiconductors together with appropriate optical model construction which can be supported or independently checked by the channeling method. However, in case of low level damage (consisting mainly of isolated point defects) ellipsometry can give false results, overestimating the damage using inappropriate dielectric functions. In that case checking by other methods like channeling is desirable

The Preparation of VO

Fiber-like VO2(B) was successfully synthesized by using V2O5 and ethanol as reactants via a magnetic stirring solvothermal process. The stirring rates significantly affected the phase, morphology and the cycling performance of as-synthesized products. When the stirring rate was 867 rpm, the fiber-like particles were 3–5 μm long and 50–100 nm wide, and showed better dispersion than the sample of VO-0, the electrochemical performance test demonstrated that the initial discharge capacity of VO-867 was 223 mAh/g, and maintained 186 mAh/g after cycling for 50 times, the retention rate of the capacity was 83.4%, which showed best cycling property of all samples

A Novel High-Performance Low-Cost Double-Upset Tolerant Latch Design

Single event double upsets (SEDUs) caused by charge sharing have been an important contributor to the soft error in integrated circuits. Most of the up-to-date double-upset (DU) tolerant latches suffer from high costs in terms of delay, power and area. In this paper, we propose a novel high-performance low-cost double-upset tolerant (HLDUT) latch. Simulation waveforms have validated the double-upset tolerance of the proposed latch. Besides, detailed comparisons demonstrate that our design saves 805.24% delay-power-area product (DPAP) on average compared with other considered up-to-date double-upset tolerant latches, which means the proposed latch is a promising candidate for future highly reliable low-cost applications

The Preparation of VO2(B) Cathode Material for Lithium-ion Battery with High Capacity and Good Cycling Performance

Fiber-like VO2(B) was successfully synthesized by using V2O5 and ethanol as reactants via a magnetic stirring solvothermal process. The stirring rates significantly affected the phase, morphology and the cycling performance of as-synthesized products. When the stirring rate was 867 rpm, the fiber-like particles were 3–5 μm long and 50–100 nm wide, and showed better dispersion than the sample of VO-0, the electrochemical performance test demonstrated that the initial discharge capacity of VO-867 was 223 mAh/g, and maintained 186 mAh/g after cycling for 50 times, the retention rate of the capacity was 83.4%, which showed best cycling property of all samples

Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter gain β0 of the parasitic BJT in NMOS device increase, while decreasing it in a PMOS device. Additionally, irradiation-generated oxide-trap charges in shallow trench isolation (STI) elevate the surface electrostatic potential of the gate above the STI sidewall, thus providing an additional channel from the emitter to the collector. Moreover, these charges may generate parasitic reverse conductive paths at the STI/Si interface under high dose irradiation, thereby enhancing the leakage current in the front gate channel and diminishing the significance of the parasitic BJT. Under irradiation, the electric field intensity difference between two biases leads to higher β0 of the parasitic BJT in PG-biased devices than in ON-biased ones. Furthermore, the lifting effect of irradiation on β0 increases in wide or short channel irradiated devices, which can be explained using simulations and an emitter current crowding effect model