Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies

The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evaluated by theory and by ex- perimental LNAs designed for the frequen- cies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications