InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra-Wideband Amplification

This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1dB average gain and 200GHz bandwidth; and the world's first M-SSDA, which has a 12dB average gain and 170GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date

InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc

Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors

In this work, the authors present two transimpedance amplifier (TIA) circuits designed for fibre optical interconnect systems. They compare a common base (CB) topology with a common emitter (CE) shunt-shunt feedback topology in terms of frequency response, power consumption, noise, and input impedance. The two TIAs are designed on a 130 nm indium phosphide double heterojunction bipolar transistor technology from Teledyne Scientific Company (TSC) with an ft/fmax of 520 GHz/1.15 THz and are measured in the frequency and time domains. They exhibit a transimpedance gain of 42 dBΩ with a 133 GHz bandwidth, the highest bandwidth reported in the literature and power consumption of 32.3 mW for the CB and 25.5 mW for the CE. Eye diagram measurements were conducted up to 64 Gbps and input referred noise density was measured at 30.2 pA/√Hz for the CB and 13.9 pA/√Hz for the CE

Ultra- Broadband Common Collector-Cascode 4-cell Distributed Amplifier in 250nm InP HBT Technology with over 200 GHz Bandwidth

An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its on-chip measurements are reported. The multi-cell distributed amplifier uses four gain cells where each consists of a common collector input stage followed by a cascode gain stage. The chip includes bias, decoupling and terminating circuits for the dc and RF interconnects; it measures 0.72 mm by 0.4 mm. It consumes 210 mW of power and can deliver up to 5.5 dBm of output power at 195 GHz. The amplifier achieves an average gain of 13.5 dB with an overall bandwidth over 200 GHz and a ± 2 dB gain ripple. The measurements indicate that this is the widest band dc-coupled amplifier reported to date and has the highest bandwidth reported among non-cascaded distributed amplifiers

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.Peer ReviewedPostprint (published version

Size dependent influence of the pad and gate parasitic elements to the microwave and noise performance of the 0.35 µm n and p type MOSFETs.

Noise and s-parameters of the p and n type MOSFETs were measured and simulated for the different bias points. The pad parasitic models of the „short“ and „open“ were extracted by means of comparison of measured and simulated s-parameters. The influence of the pad elements on the microwave noise was analyzed. The simulation of intrinsic device noise was performed on the basis of good fit of measured and simulated noise and s-parameters of the DUT. For the narrow gate (50 µm) width devices the pad parasitics significantly affect microwave noise performance for both p and n type devices. At the lower drain currents the kinks and loops in the s-parameters were observed. At low drain current a resonant peak in NFmin and Rn around 8 GHz was found. Those resonant effects observed in noise and s-parameters diminish with the increase of the drain current and were qualitatively accounted for by the simulations by using equivalent circuit with the parasitic inductive element coupled to the gate