26 research outputs found

    What Causes My Test Alarm? Automatic Cause Analysis for Test Alarms in System and Integration Testing

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    Driven by new software development processes and testing in clouds, system and integration testing nowadays tends to produce enormous number of alarms. Such test alarms lay an almost unbearable burden on software testing engineers who have to manually analyze the causes of these alarms. The causes are critical because they decide which stakeholders are responsible to fix the bugs detected during the testing. In this paper, we present a novel approach that aims to relieve the burden by automating the procedure. Our approach, called Cause Analysis Model, exploits information retrieval techniques to efficiently infer test alarm causes based on test logs. We have developed a prototype and evaluated our tool on two industrial datasets with more than 14,000 test alarms. Experiments on the two datasets show that our tool achieves an accuracy of 58.3% and 65.8%, respectively, which outperforms the baseline algorithms by up to 13.3%. Our algorithm is also extremely efficient, spending about 0.1s per cause analysis. Due to the attractive experimental results, our industrial partner, a leading information and communication technology company in the world, has deployed the tool and it achieves an average accuracy of 72% after two months of running, nearly three times more accurate than a previous strategy based on regular expressions.Comment: 12 page

    Ag nanoparticles/PPV composite nanofibers with high and sensitive opto-electronic response

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    The novel Ag nanoparticles/poly(p-phenylene vinylene) [PPV] composite nanofibers were prepared by electrospinning. The transmission electron microscope image shows that the average diameter of composite fibers is about 500 nm and Ag nanoparticles are uniformly dispersed in the PPV matrix with an average diameter of about 25 nm. The Fourier transform infrared spectra suggest that there could be a coordination effect to a certain extent between the Ag atom and the π system of PPV, which is significantly favorable for the dissociation of photoexcitons and the charge transfer at the interface between the Ag nanoparticle and the PPV. The Au top electrode device of the single Ag/PPV composite nanofiber exhibits high and sensitive opto-electronic responses. Under light illumination of 5.76 mW/cm2 and voltage of 20 V, the photocurrent is over three times larger than the dark current under same voltage, which indicates that this kind of composite fiber is an excellent opto-electronic nanomaterial

    The clinical characteristics and etiological study of nonalcoholic fatty liver disease in Chinese women with PCOS

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    Background: Polycystic ovary syndrome (PCOS) is highly associated with non-alcoholic fatty liver disease (NAFLD). There are extensive ethnic differences in the clinical manifestations, pathological changes, and ovarian changes in women with PCOS. Objective: To investigate the prevalence and clinical characteristics of NAFLD in Chinese women with PCOS. Materials and Methods: Non-pregnant women with PCOS (N= 602) and matched controls without PCOS (N=588) were recruited. Basal endocrine, oral glucose tolerance test, insulin release level, lipid level, blood pressure, and body mass index (BMI) were measured. Liver biochemical and B-hepatitis and C-hepatitis indices were determined. Results: NAFLD was significantly more prevalent in women with PCOS than controls (32.9% vs. 18.5%) and included 113 (57.1%) mild, 75 (37.8%) moderate and 10 (5.1%) severe cases. Luteinizing hormone was significantly lower in PCOS women with NAFLD than without NAFLD. In the PCOS group, NAFLD prevalence and severity increased with BMI. The liver index was significantly higher (p<0.001), and the quantitative insulin sensitivity check index and high density lipoprotein cholesterol were significantly lower (p<0.001) in the PCOS group than controls. Insulin resistance, abdominal obesity, diabetes mellitus, abnormal glucose tolerance, liver dysfunction, dyslipidemia, hypertension, and metabolic syndrome were significantly more prevalent in the NAFLD group than controls. Conclusion: Chinese women with PCOS have a high prevalence of mostly mild and moderate NAFLD, not significantly associated with hyperandrogenism that increased significantly with BMI. Insulin resistance and metabolic abnormalities are important factors associated with NAFLD. Chinese women with BMI ≥24 kg/m2 should be screened for NAFLD

    First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

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    Abstract Advanced semiconductor superlattices play important roles in critical future high-tech applications such as aerospace, high-energy physics, gravitational wave detection, astronomy, and nuclear related areas. Under such extreme conditions like high irradiative environments, these semiconductor superlattices tend to generate various defects that ultimately may result in the failure of the devices. However, in the superlattice like GaAs/AlAs, the phase stability and impact on the device performance of point defects are still not clear up to date. The present calculations show that in GaAs/AlAs superlattice, the antisite defects are energetically more favorable than vacancy and interstitial defects. The AsX (X = Al or Ga) and XAs defects always induce metallicity of GaAs/AlAs superlattice, and GaAl and AlGa antisite defects have slight effects on the electronic structure. For GaAs/AlAs superlattice with the interstitial or vacancy defects, significant reduction of band gap or induced metallicity is found. Further calculations show that the interstitial and vacancy defects reduce the electron mobility significantly, while the antisite defects have relatively smaller influences. The results advance the understanding of the radiation damage effects of the GaAs/AlAs superlattice, which thus provide guidance for designing highly stable and durable semiconductor superlattice based electronic and optoelectronics for extreme environment applications

    Knowledge, attitudes, and practice towards allergic rhinitis in patients with allergic rhinitis: a cross-sectional study

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    Abstract Background The knowledge, attitude, and practice (KAP) of Chinese patients with allergic rhinitis (AR) on AR is poorly known. This study investigated the KAP towards AR in patients with this disease and explored the factors associated with KAP. Methods This cross-sectional study enrolled patients with AR in Zhangjiagang Hospital of Traditional Chinese Medicine between October 2022 and March 2023. Results This study included 656 valid questionnaires. Most participants were 26–35 years old (36.13%) and were female (55.18%). The knowledge, attitude, and practice scores were 5.70 ± 2.88 (possible range: 0–12), 29.51 ± 3.52 (possible range: 9–45), and 34.13 ± 7.55 (possible range: 9–45), indicating poor knowledge, unfavorable attitudes, and proactive practice. AR history of 3–5 years (adjusted odds ratio (adjOR) = 1.62, 95% confidence interval (CI): 1.03–2.54, P = 0.037), AR history of > 6 years (adjOR = 1.64, 95%CI: 1.06–2.54, P = 0.027), and know their own allergens (adjOR = 2.34, 95%CI: 1.28–4.25, P = 0.005) were independently associated with the sufficient knowledge. AR history of ≥ 6 years (adjOR = 0.60, 95%CI: 0.37–0.96, P = 0.035), and liking sports (adjOR = 1.58, 95%CI = 1.07–2.33, P = 0.020) were independently associated with the positive attitude. The knowledge scores (adjOR = 1.14, 95%CI: 1.05–1.22, P = 0.001), attitude scores (adjOR = 1.24, 95%CI: 1.17–1.32, P < 0.001), age 36–45 (adjOR = 2.13, 95%CI: 1.19–3.82, P = 0.011), employed (adjOR = 0.59, 95%CI: 0.37–0.94, P = 0.026), and liking sports (adjOR = 2.11, 95%CI: 1.43–3.14, P < 0.001) were independently associated with the proactive practice. Conclusions Patients with AR have poor knowledge and unfavorable attitudes but good practice toward AR. Continuous quality teaching interventions and education on patients for AR were recommended

    A DFT Study of Hydrogen Storage in High-Entropy Alloy TiZrHfScMo

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    In recent years, high-entropy alloys have been proposed as potential hydrogen storage materials. Despite a number of experimental efforts, there is a lack of theoretical understanding regarding the hydrogen absorption behavior of high-entropy alloys. In this work, the hydrogen storage properties of a new TiZrHfScMo high-entropy alloy are investigated. This material is synthesized successfully, and its structure is characterized as body-centered cubic. Based on density functional theory, the lattice constant, formation enthalpy, binding energy, and electronic properties of hydrogenated TiZrHfScMo are all calculated. The calculations reveal that the process of hydrogenation is an exothermic process, and the bonding between the hydrogen and metal elements are of covalent character. In the hydrogenated TiZrHfScMo, the Ti and Sc atoms lose electrons and Mo atoms gain electrons. As the H content increases, the &lt;Ti&#8211;H&gt; bonding is weakened, and the &lt;Hf&#8211;H&gt; and &lt;Mo&#8211;H&gt; bonding are strengthened. Our calculations demonstrate that the TiZrHfScMo high-entropy alloy is a promising hydrogen storage material, and different alloy elements play different roles in the hydrogen absorption process

    Catalyzing Cascade Production of Methyl Levulinate from Polysaccharides Using Heteropolyacids H<sub><i>n</i></sub>PW<sub>11</sub>MO<sub>39</sub> with Brønsted/Lewis Acidic Sites

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    A series of Lewis acid metals monosubstituted phosphotungstic acids H<sub><i>n</i></sub>PW<sub>11</sub>MO<sub>39</sub> (HPWM, M = Cu<sup>II</sup>, Zn<sup>II</sup>, Cr<sup>III</sup>, Fe<sup>III</sup>, Sn<sup>IV</sup>, Ti<sup>IV</sup>, and Zr<sup>IV</sup>; for Ti and Zr, the number of oxygen is 40) was evaluated in direct production of methyl levulinate (ML) from cellulosic biomass in a cascade reaction. One of the solid catalysts, H<sub>5</sub>PW<sub>11</sub>TiO<sub>40</sub> (HPWTi), was found to be highly efficient for generation of ML from mono- or polysaccharides, reaching 51.3% ML yield directly from cellulose. And under microwave-assistance, the efficiency could be improved to a 62.6% ML yield within 2 h, which was almost the best result so far among reported solid catalysts. Identification of the reaction intermediates and the products provided some insight into the reaction mechanism and showed the requirement of certain Brønsted/Lewis acid ratio as 2.84/1 for HPWM. Moreover, the different metals in catalysts profoundly affected the Lewis or total acidity, and therefore, the catalytic activity and selectivity to ML or methyl glucosides (MG). HPWTi acted as a heterogeneous catalyst after being calcinated at 200 °C and showed high recyclability with minor loss of performance

    The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

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    In this paper, the structure and photoelectric characteristics of zincblende InxGa1&minus;xN alloys are systematically calculated and analyzed based on the density functional theory, including the lattice constant, band structure, distribution of electronic states, dielectric function, and absorption coefficient. The calculation results show that with the increase in x, the lattice constants and the supercell volume increase, whereas the bandgap tends to decrease, and InxGa1&minus;xN alloys are direct band gap semiconductor materials. In addition, the imaginary part of the dielectric function and the absorption coefficient are found to redshift with the increase in indium composition, expanding the absorption range of visible light. By analyzing the lattice constants, polarization characteristics, and photoelectric properties of the InxGa1&minus;xN systems, it is observed that zincblende InxGa1&minus;xN can be used as an alternative material to replace the channel layer of wurtzite InxGa1&minus;xN heterojunction high electron mobility transistor (HEMT) devices to achieve the manufacture of HEMT devices with higher power and higher frequency. In addition, it also provides a theoretical reference for the practical application of InxGa1&minus;xN systems in optoelectronic devices
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