On the momentum-dependence of K−K^{-}-nuclear potentials

The momentum dependent $K^{-}$-nucleus optical potentials are obtained based on the relativistic mean-field theory. By considering the quarks coordinates of $K^-$ meson, we introduced a momentum-dependent "form factor" to modify the coupling vertexes. The parameters in the form factors are determined by fitting the experimental $K^{-}$-nucleus scattering data. It is found that the real part of the optical potentials decrease with increasing $K^-$ momenta, however the imaginary potentials increase at first with increasing momenta up to $P_k=450\sim 550$ MeV and then decrease. By comparing the calculated $K^-$ mean free paths with those from $K^-n$/$K^-p$ scattering data, we suggested that the real potential depth is $V_0\sim 80$ MeV, and the imaginary potential parameter is $W_0\sim 65$ MeV.Comment: 9 pages, 4 figure

The properties of kaonic nuclei in relativistic mean-field theory

The static properties of some possible light and moderate kaonic nuclei, from C to Ti, are studied in the relativistic mean-field theory. The 1s and 1p state binding energies of $K^-$ are in the range of $73\sim 96$ MeV and $22\sim 63$ MeV, respectively. The binding energies of 1p states increase monotonically with the nucleon number A. The upper limit of the widths are about $42\pm 14$ MeV for the 1s states, and about $71\pm 10$ MeV for the 1p states. The lower limit of the widths are about $12\pm 4$ MeV for the 1s states, and $21\pm 3$ MeV for the 1p states. If $V_{0}\leq 30$ MeV, the discrete $K^-$ bound states should be identified in experiment. The shrinkage effect is found in the possible kaonic nuclei. The interior nuclear density increases obviously, the densest center density is about $2.1\rho_{0}$.Comment: 9 pages, 2 tables and 1 figure, widths are considered, changes a lo

First-principles study of native point defects in Bi2Se3

Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi$_2$Se$_3$. Se vacancy in Bi$_2$Se$_3$ is a double donor, and Bi vacancy is a triple acceptor. Se antisite (Se$_{Bi}$) is always an active donor in the system because its donor level ($\varepsilon$(+1/0)) enters into the conduction band. Interestingly, Bi antisite(Bi$_{Se1}$) in Bi$_2$Se$_3$ is an amphoteric dopant, acting as a donor when $\mu$$_e$$<$0.119eV (the material is typical p-type) and as an acceptor when $\mu$$_e$$>$0.251eV (the material is typical n-type). The formation energies under different growth environments (such as Bi-rich or Se-rich) indicate that under Se-rich condition, Se$_{Bi}$ is the most stable native defect independent of electron chemical potential $\mu$$_e$. Under Bi-rich condition, Se vacancy is the most stable native defect except for under the growth window as $\mu$$_e$$>$0.262eV (the material is typical n-type) and $\Delta$$\mu$$_{Se}$$<$-0.459eV(Bi-rich), under such growth windows one negative charged Bi$_{Se1}$ is the most stable one.Comment: 7 pages, 4 figure