36,555 research outputs found
Dr. Yang Zhong: an explorer on the road forever
On the morning of September 25th 2017, grievous news spread from the remote Ordos region of Inner Mongolia to Fudan University campus in Shanghai. Professor Yang Zhong, a famous botanist and the Dean of Fudan University’s graduate school, passed away in a tragic car accident while on a business trip
Captures of Hot and Warm Sterile Antineutrino Dark Matter on EC-decaying Ho-163 Nuclei
Capturing low-energy electron antineutrinos on radioactive Ho-163 nuclei,
which decay into Dy-163 via electron capture (EC), is a noteworthy opportunity
to detect relic sterile antineutrinos. Such hypothetical particles are more or
less implied by current experimental and cosmological data, and they might be a
part of hot dark matter or a candidate for warm dark matter in the Universe.
Using the isotope Ho-163 as a target and assuming reasonable active-sterile
antineutrino mixing angles, we calculate the capture rate of relic electron
antineutrinos against the corresponding EC-decay background in the presence of
sterile antineutrinos at the sub-eV or keV mass scale. We show that the
signature of hot or warm sterile antineutrino dark matter should in principle
be observable, provided the target is big enough and the energy resolution is
good enough.Comment: 16 pages, 6 figures, more discussions and references added. To appear
in JCA
A More Precise Extraction of |V_{cb}| in HQEFT of QCD
The more precise extraction for the CKM matrix element |V_{cb}| in the heavy
quark effective field theory (HQEFT) of QCD is studied from both exclusive and
inclusive semileptonic B decays. The values of relevant nonperturbative
parameters up to order 1/m^2_Q are estimated consistently in HQEFT of QCD.
Using the most recent experimental data for B decay rates, |V_{cb}| is updated
to be |V_{cb}| = 0.0395 \pm 0.0011_{exp} \pm 0.0019_{th} from B\to D^{\ast} l
\nu decay and |V_{cb}| = 0.0434 \pm 0.0041_{exp} \pm 0.0020_{th} from B\to D l
\nu decay as well as |V_{cb}| = 0.0394 \pm 0.0010_{exp} \pm 0.0014_{th} from
inclusive B\to X_c l \nu decay.Comment: 7 pages, revtex, 4 figure
Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping
[[abstract]]The effect of pretreatment bias on the nucleation and growth mechanisms of the ultrananocrystalline diamond (UNCD) films on the Si substrate via bias-enhanced nucleation and bias-enhanced growth (BEN-BEG) was investigated using cross-sectional high-resolution transmission electron microscopy, chemical bonding mapping, and Raman spectroscopy. The mirror-polished substrate surface showed the formation of a triangular profile produced by a dominant physical sputtering mechanism induced by ion bombardment of ions from the hydrogen plasma accelerated toward the substrate due to biasing and a potential hydrogen-induced chemical reaction component before synthesizing the UNCD films. The BEN-BEG UNCD films grown on the Si substrate with biased and unbiased pretreatments in the hydrogen plasma were compared. In the case of the bias-pretreated substrate, the SiC phases were formed at the peaks of the Si surface triangular profile due to the active unsaturated Si bond and the enhanced local electrical field. The UNCD grains grew preferentially at the peaks of the triangular substrate surface profile and rapidly covered the amorphous carbon (a-C) and oriented graphite phases formed in the valley of the surface profile. In the case of the substrate with unbiased pretreatment, the SiC phases were formed via the reactions between the hydrocarbon species and the active Si atoms released from the substrate with assistance of the hydrogen plasma. The UNCD grains nucleated on the nucleating sites consisting of the SiC, a-C, and graphite phases. Growth mechanisms for the BEN-BEG UNCD films on both Si substrates were proposed to elucidate the different nucleation processes. Applying bias on the Si substrate pretreated in the hydrogen plasma optimized the nucleation sites for growth of UNCD grains, resulting in the low content of the nondiamond phases in UNCD films.[[notice]]補正完畢[[booktype]]紙本[[booktype]]電子版[[countrycodes]]US
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