Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies within the a-IGZO:N layer is suppressed due to the formation of N-Ga bonds. Meanwhile, low frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops as the nitrogen content within the a-IGZO:N layer increases. The improved interface quality upon nitrogen doping agrees with the enhanced bias stress stability of the a-IGZO TFTs.This work was supported in part by the State Key Program for Basic Research of China under Grant Nos. 2010CB327504, 2011CB922100, and 2011CB301900; in part by the National Natural Science Foundation of China under Grant Nos. 60936004 and 11104130; in part by the Natural Science Foundation of Jiangsu Province under Grant Nos. BK2011556 and BK2011050; and in part by the Priority Academic Program Development of Jiangsu Higher Education Institutions

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures

Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor(TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold swing (SS) is observed when the illumination wavelength is below 625 nm (∼2.0 eV). The SS degradation is accompanied by a simultaneous increase of the field effect mobility (μFE) of the TFT, which then decreases at even shorter wavelength beyond 540 nm (∼2.3 eV). The variation of SS and μFE is explained by a physical model based on generation of singly ionized oxygen vacancies (Vo⁺) and double ionized oxygen vacancies (Vo²⁺) within the a-IGZO active layer by high energy photons, which would form trap states near the mid-gap and the conduction band edge, respectively.This work was supported by the State Key Program for Basic Research of China under Grant Nos. 2010CB327504, 2011CB922100, 2011CB301900; the National Natural Science Foundation of China under Grant Nos. 60825401, 60936004, 11104130, BK2011556, and BK2011050

Staircase Band Gap Si \u3csub\u3e1-x\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3e/Si Photodectectors

We fabricated Si 1-xGex/Si photodetectors by using a staircase band gap Si 1-xGex/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at -5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/μm2 at V bias, and the breakdown voltage is -27 V. The high response is explained as the result of a staircase band gap by theoretical analysis

Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.This research is supported by the State Key Program for Basic Research of China under Grant No. 2011CB302003, National Natural Science Foundation of China (Nos. 61025020, 60990312, and 61274058), Basic Research Program of Jiangsu Province (BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions

Room-Temperature Blue Luminescence of Thermally Oxidized Si\u3csub\u3e1-x-y\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3eC\u3csub\u3ey\u3c/sub\u3e Thin Films on Si (100) Substrates

We measured at room temperature the photoluminescence spectra of the thermally oxidized Si1-x-yGexCy thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and the wet oxidized at 1100 °C for 20 min. The photoluminescence band with a peak at ~393 nm under the exciting radiation of λ = 241 nm was observed. Possible mechanism of this photoluminescence is discussed

Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods

InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.This work was supported by Special Funds for Major State Basic Research Project (Nos. 2011CB301900 and 2012CB619304), the Hi-tech Research Project (No. 2014AA032605), National Nature Science Foundation of China (Nos. 11104130, 61274003, 60990311, 61176063, and 61422401), the Program for New Century Excellent Talents in University (No. NCET-11-0229), Nature Science Foundation of Jiangsu Province (Nos. BK2011556, BK2011010, BK2010385, BY2013077, and BE2011132), Funds of Key Laboratory (No. 9140C140102120C14), Scientific Innovation Research of College Graduate in Jiangsu Province (CXZZ12_0052), PAPD, the Fundamental Research Funds for the Central Universities, the Research Funds from NJUYangzhou Institute of Opto-electronics, and the Australian Research Council Discovery Early Career Researcher Award (DE130101700)