Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of the representative MoS$_2$, WS$_2$, WSe$_2$, and MoSe$_2$ TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer dependent. In this review, we discuss the basic lattice vibrations of monolayer, multilayer, and bulk TMDs, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica, and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin--orbit splitting, and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.Comment: 30 pages, 23 figure

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions firstly to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs

Emergent conformal symmetry for black holes without Z2\mathbb{Z}_2 symmetry

We investigate the motion of the massless scalar field and the nearly bound null geodesic in the near-ring region of a black hole with either acceleration or Misner charge, around which the photon ring deviates from the equatorial plane. In the eikonal limit, we demonstrate that the massless scalar field exhibits an emergent $\mathfrak{s l}(2, \mathbb{R})_{\mathrm{QN}}$ conformal algebra in the near-ring region. Additionally, in the nearly bound limit, we observe the emergence of an $\mathfrak{s l}(2, \mathbb{R})_{\mathrm{PR}}$ conformal algebra for the null geodesics that form the photon ring in the black hole image. Our findings indicate that the emergent $\mathfrak{s l}(2, \mathbb{R})$ conformal symmetry persists even for black holes without $\mathbb{Z}_2$ symmetry, thus expanding the foundations of photon ring holography.Comment: 21 page