Long-term stability studies of a semiconductor photoelectrode in three-electrode configuration

Improving the stability of semiconductor materials is one of the major challenges for sustainable and economic photoelectrochemical water splitting. N-terminated GaN nanostructures have emerged as a practical protective layer for conventional high efficiency but unstable Si and III-V photoelectrodes due to their near-perfect conduction band-alignment, which enables efficient extraction of photo-generated electrons, and N-terminated surfaces, which protects against chemical and photo-corrosion. Here, we demonstrate that Pt-decorated GaN nanostructures on an n+-p Si photocathode can exhibit an ultrahigh stability of 3000 h (i.e., over 500 days for usable sunlight ∼5.5 h per day) at a large photocurrent density (>35 mA cm-2) in three-electrode configuration under AM 1.5G one-sun illumination. The measured applied bias photon-to-current efficiency of 11.9%, with an excellent onset potential of ∼0.56 V vs. RHE, is one of the highest values reported for a Si photocathode under AM 1.5G one-sun illumination. This study provides a paradigm shift for the design and development of semiconductor photoelectrodes for PEC water splitting: stability is no longer limited by the light absorber, but rather by co-catalyst particles

Heavy Quark Potentials in Some Renormalization Group Revised AdS/QCD Models

We construct some AdS/QCD models by the systematic procedure of GKN. These models reflect three rather different asymptotics the gauge theory beta functions approach at the infrared region, $\beta\propto-\lambda^2, -\lambda^3$ and $\beta\propto-\lambda$, where $\lambda$ is the 't Hooft coupling constant. We then calculate the heavy quark potentials in these models by holographic methods and find that they can more consistently fit the lattice data relative to the usual models which do not include the renormalization group improving effects. But only use the lattice QCD heavy quark potentials as constrains, we cannot distinguish which kind of infrared asymptotics is the better one.Comment: comparisons with lattice results, qualitative consideration of quantum corrections are added. (accepted by Phys. Rev. D

Hydrostatic pressure induced Dirac semimetal in black phosphorus

Motivated by recent experimental observation of an hydrostatic pressure induced transition from semiconductor to semimetal in black phosphorus [Chen et al. in arXiv:1504.00125], we present the first principles calculation on the pressure effect of the electronic structures of black phosphorus. It is found that the band crossover and reversal at the Z point occur around the critical pressure Pc1=1.23 Gpa, and the band inversion evolves into 4 twofold-degenerate Dirac cones around the Z point, suggesting a 3D Dirac semimetal. With further increasing pressure the Dirac cones in the Gamma-Z line move toward the Gamma point and evolve into two hole-type Fermi pockets, and those in the Z-M lines move toward the M point and evolve into 2 hole-type Fermi pockets up to P=4.0 Gpa. It demonstrates clearly that the Lifshitz transition occurs at $P_{c1}$ from semiconductor to 3D Dirac semimetal protected by the nonsymmorphic space symmetry of bulk. This suggests the bright perspective of black phosphorus for optoelectronic and electronic devices due to its easy modulation by pressure.Comment: 7 pages, 9 figures, and 2 table

A bank customer credit evaluation based on the decision tree and the simulated annealing algorithm

C4.5 is a learning algorithm that adopts local search strategy, and it cannot obtain the best decision rules. On the other hand, the simulated annealing algorithm is a globally optimized algorithm and it avoids the drawbacks of C4.5. This paper proposes a new credit evaluation method based on decision tree and simulated annealing algorithm. The experimental results demonstrate that the proposed method is effective. © 2008 IEEE

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals

We report novel magnetotransport properties of the low temperature Fermi liquid in SrTiO3-x single crystals. The classical limit dominates the magnetotransport properties for a magnetic field perpendicular to the sample surface and consequently a magnetic-field induced resistivity minimum emerges. While for the field applied in plane and normal to the current, the linear magnetoresistance (MR) starting from small fields (< 0.5 T) appears. The large anisotropy in the transverse MRs reveals the strong surface interlayer scattering due to the large gradient of oxygen vacancy concentration from the surface to the interior of SrTiO3-x single crystals. Moreover, the linear MR in our case was likely due to the inhomogeneity of oxygen vacancies and oxygen vacancy clusters, which could provide experimental evidences for the unusual quantum linear MR proposed by Abrikosov [A. A. Abrikosov, Phys. Rev. B 58, 2788 (1998)].Comment: 5 pages, 4 figure