Order parameter and current-phase relation in Josephson junctions composed of g+s-wave superconductors

Based on the analyses of bulk sensitive experimental data on penetration depths, Raman spectra, electron photoemission spectra, etc., G. M. Zhao concluded in a recent paper [Phys. Rev. B 64, 024503 (2001)] that the symmetry of high-Tc superconductors belongs to the g+s-wave type. To explore the common and uncommon features of the g+s-wave pairing state with respect to the d-wave pairing state, both superconductor-insulator-superconductor junction and superconductor-normal metal-superconductor junction have been studied self-consistently in this paper using the quasiclassical theory. The current phase relation for g+s-wave superconductors Δ(s,θ)=Δ0(s+cos 4θ) is investigated systematically as functions of s-wave component, crystal orientation angle β, as well as roughness ρ of the interface layer. Our results show that there exists a critical βC for a given s and ρ so that the current phase relation approaches asymptotically to I(φ)=ICsin(2φ) from I(φ)=ICsin(φ) as β→βC. The order parameter and βC-s relation are calculated self-consistently as interface roughness varies. Our results are compared with their counterparts in Josephson junctions with the d-wave pairing state obtained using a similar method.published_or_final_versio

SEARCHING FOR DEBRIS DISKS AROUND SEVEN RADIO PULSARS

We report on our searches for debris disks around seven relatively nearby radio pulsars, which are isolated sources that were carefully selected as targets on the basis of our deep Ks-band imaging survey. The Ks images obtained with the 6.5m Baade Magellan Telescope at Las Campanas Observatory are analyzed together with the Spitzer/IRAC images at 4.5 and 8.0μm and the WISE images at 3.4, 4.6, 12, and 22μm. No infrared counterparts of these pulsars are found, with flux upper limits of ∼μJy at near-infrared (λ < 10μm) and ∼10–1000μJy at mid-infrared wavelengths (λ > 10 μm). The results of this search are discussed in terms of the efficiency of converting the pulsar spin-down energy to thermal energy and X-ray heating of debris disks, with a comparison made of the two magnetars 4U 0142+61 and 1E 2259+586, which are suggested to harbor a debris disk.published_or_final_versio

A Novel Eigenvalue Algorithm for the Complex Band Structure and Eigenmodes of Plasmonic Crystals

published_or_final_versio

Excitonic quantum confinement modified optical conductivity of monolayer and few-layered MoS2

2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of RecordPublishe

Sign reversal of the mixed-state Hall resistivity in type-II superconductors

Taking into account pinning, thermal fluctuations, and vortex-vortex interactions, we develop a unified theory to explain the sign reversal of the mixed-state Hall resistivity ρ xy in both high-T c and low-T c superconductors. Molecular dynamics simulations show that besides the pinning forces, either the thermal fluctuations in the high-T c superconductors or the vortex-vortex interactions in the low-T c ones play an important role in the sign reversal of ρ xy. From a calculated phase diagram for vortex motion, we find that the abnormal Hall effect always occurs in the plastic flow state of vortices. ©1999 The American Physical Society.published_or_final_versio

Threshold-voltage instability of polymer thin-film transistor under gate-bias and drain-bias stresses

Polymer thin-film transistors (PTFTs) based on MEH-PPV semiconductor are fabricated by spin-coating process and characterized. Gate-bias and drain-bias stress effects at room temperature are observed in the devices. The saturation current decreases and the threshold voltage shifts toward negative direction upon the gate-bias stress. However, the saturation current increases and the threshold voltage shifts toward positive direction upon the drain-bias stress. For variable bias stress conditions, carrier mobility is almost unchanged. The results suggest that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the SiO 2 gate dielectric or at the SiO 2/Si interface due to hotcarrier emission under high gate-bias stress, while time-dependent charge trapping into the deep trap states in the channel region is responsible for the drain-bias stress effect in the PTFTs. © 2008 IEEE.published_or_final_versio

Facile Synthesis of High Quality Graphene Nanoribbons

Graphene nanoribbons have attracted attention for their novel electronic and spin transport properties1-6, and because nanoribbons less than 10 nm wide have a band gap that can be used to make field effect transistors. However, producing nanoribbons of very high quality, or in high volumes, remains a challenge. Here, we show that pristine few-layer nanoribbons can be produced by unzipping mildly gas-phase oxidized multiwalled carbon nanotube using mechanical sonication in an organic solvent. The nanoribbons exhibit very high quality, with smooth edges (as seen by high-resolution transmission electron microscopy), low ratios of disorder to graphitic Raman bands, and the highest electrical conductance and mobility reported to date (up to 5e2/h and 1500 cm2/Vs for ribbons 10-20 nm in width). Further, at low temperature, the nanoribbons exhibit phase coherent transport and Fabry-Perot interference, suggesting minimal defects and edge roughness. The yield of nanoribbons was ~2% of the starting raw nanotube soot material, which was significantly higher than previous methods capable of producing high quality narrow nanoribbons1. The relatively high yield synthesis of pristine graphene nanoribbons will make these materials easily accessible for a wide range of fundamental and practical applications.Comment: Nature Nanotechnology in pres

Variations of Particle Size Distribution, Black Carbon, and Brown Carbon during a Severe Winter Pollution Event over Xi'an, China

Real-time particulate matter (PM) size distributions, 4-hour time resolution, PM2.5, carbonaceous materials, and their optical properties were measured during a severe pollution event in Xi&#39;an, China High PM2.5 /PM10 ratios were observed on both pollution (0.83) and non-pollution (0.73) days, emphasizing the abundance of fine particles during sampling days. The particle number (PN) first peaked with a wide size range (30-100 nm) before morning rush hours (approximately 01:00-05:00) on pollution and non-pollution days, demonstrating that PN was governed by the accumulation of freshly emitted diesel particles and characterized by distinct aerosol condensation growth. By contrast, the second peak time and size range differed between pollution and non-pollution days because of different formation mechanisms The light-absorbing coefficients of both black carbon (BC, b(abs-880nm,BC)) and brown carbon (BrC, b(abs-370nm, BrC)) were high on pollution days and decreased to approximately half of those values on non-pollution days, indicating that the degree of light absorption is reduced by rain. The diurnal variation in b(abs-880nm, BC) pollution peaked with traffic on January 1 and 2. By contrast, it remained in relatively stable and high ranges (120-160 Mm(-1)) in the second period (January 3-5) without traffic peaks, illustrating that the dominant sources changed even during the same pollution period. High values of both b(abs-370nm, BrC) and b(abs-880nm,) (BC )coincided in the afternoon and evening due to emissions from primary sources, and abundant aqueous secondary organic carbon, respectively. A highly variable mass absorption coefficient of BrC also indicated the variety of fuel combustion sources of primary BrC in Xi&#39;an

Evidence for Anthropogenic Surface Loading as Trigger Mechanism of the 2008 Wenchuan Earthquake

Two and a half years prior to China's M7.9 Wenchuan earthquake of May 2008, at least 300 million metric tons of water accumulated with additional seasonal water level changes in the Minjiang River Valley at the eastern margin of the Longmen Shan. This article shows that static surface loading in the Zipingpu water reservoir induced Coulomb failure stresses on the nearby Beichuan thrust fault system at <17km depth. Triggering stresses exceeded levels of daily lunar and solar tides and perturbed a fault area measuring 416+/-96km^2. These stress perturbations, in turn, likely advanced the clock of the mainshock and directed the initial rupture propagation upward towards the reservoir on the "Coulomb-like" Beichuan fault with rate-and-state dependent frictional behavior. Static triggering perturbations produced up to 60 years (0.6%) of equivalent tectonic loading, and show strong correlations to the coseismic slip. Moreover, correlations between clock advancement and coseismic slip, observed during the mainshock beneath the reservoir, are strongest for a longer seismic cycle (10kyr) of M>7 earthquakes. Finally, the daily event rate of the micro-seismicity (M>0.5) correlates well with the static stress perturbations, indicating destabilization.Comment: 22 pages, 4 figures, 3 table