Femtosecond Carrier Dynamics in In2O3Nanocrystals

We have studied carrier dynamics in In2O3nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photo-generated carriers in In2O3nanocrystals. Intensity measurements reveal that Auger recombination plays a crucial role in the carrier dynamics for the carrier densities investigated in this study. A simple differential equation model has been utilized to simulate the photo-generated carrier dynamics in the nanocrystals and to fit the fluence-dependent differential absorption measurements. The average value of the Auger coefficient obtained from fitting to the measurements was γ = 5.9 ± 0.4 × 10−31 cm6 s−1. Similarly the average relaxation rate of the carriers was determined to be approximately τ = 110 ± 10 ps. Time-resolved measurements also revealed ~25 ps delay for the carriers to reach deep traps states which have a subsequent relaxation time of approximately 300 ps

Evaluation of rare earth oxides doping SnO2.(Co1/4,Mn3/4)O-based varistor system

The present paper aims to verify the inuence of rare earth oxide such as lanthanum (La2O3) and neodymium (Nd2O3) doping SnO2 + 0.25%CoO + 0.75%MnO2 + 0.05%Ta2O5 system. The analysis focus on microstructural inuence on electrical properties. Microstructural analysis were made by using Transmission Electron Microscopy (TEM) at different regions of the samples. From such analysis it was found that La2O3 and Nd2O3 oxides cause heterogeneous segregation and precipitation at grain boundary concerning cobalt and manganese, decreasing the nonohmic electrical properties, as discussed, likely due to the increasing of grain boundary non-active potential barriers