Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model

An analytical device model to study the characteristics of the temperature sensor built on thin silicon film was developed. The device had higher maximum operating temperature due to larger minority-carrier exclusion length. The carrier-concentration distribution in the minority-exclusion region, exclusion length and the temperature dependence of the sensor resistance of the model was verified by device simulation. The model can be used to study the principle of the minority-carrier exclusion effect and also to guide the design of temperature sensors built on thin silicon film for high-temperature applications.published_or_final_versio

Quantum superposition principle and generation of ultrashort optical pulses

We discuss the propagation of laser radiation through a medium of quantum prepared {\Lambda}-type atoms in order to enhance the insight into the physics of QS-PT generator suggested in Phys. Rev. A 80, 035801 (2009). We obtain analytical results which give a qualitatively corerct description of the outcoming series of ultrashort optical pulses and show that for the case of alkali vapor medium QS-PT generation may be implemented under ordinary experimental conditions

Current-induced magnetization dynamics in Co/Cu/Co nanopillars

Author name used in this publication: S. Q. Shi2007-2008 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Magnetically tunable properties related with carriers density in self-doped La1−xMnO3/y wt %Nb-SrTiO3 heteroepitaxial junctions

The self-doped La1−xMnO3 (x=0.1 and 0.3) thin films deposited on Nb-doped (wt % y) SrTiO3 (y=0.05 and 0.8) crystals to form heteroepitaxial junctions have been prepared by the pulse laser deposition method. The current-voltage loops of junction were measured at several fixed magnetic fields for the temperature from 10 to 300 K. We have focused on the effects of doping level and annealing time on the magnetically tunable property of the junction. The results show that these junctions have a typical temperature-dependent rectifying characteristics and asymmetrical hysteresis. The magnetically tunable property of the junction was related with the annealing time for the self-doped La1−xMnO3−δ thin film and the doping level in the Nb-doped SrTiO3 (STON) crystal. In the self-doped La0.9MnO3/0.05-STON junction annealed at 900 °C for 5 h, the relative ratio of voltage [Vb(0)−Vb(H)] /Vb(0) is about 70% at H=6 T and T=70 K for I=0.1 mA, showing a large magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.published_or_final_versio

Micromagnetic simulations of current-induced magnetization switching in Co/Cu/Co nanopillars

Author name used in this publication: S. Q. Shi2007-2008 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe