3,019 research outputs found
Unexpected features of e+e-->ppbar and e+e-->lambda-lambdabar cross sections near threshold
Unexpected features of the BaBar data on e+e- in baryon-antibaryon cross
sections are discussed. These data have been collected, with unprecedented
accuracy, by means of the initial state radiation technique, which is
particularly suitable in giving good acceptance and energy resolution at
threshold. A striking feature observed in the BaBar data is the non-vanishing
cross section at threshold for all these processes. This is the expectation due
to the Coulomb enhancement factor acting on a charged fermion pair. In the case
of e+e- in proton-antiproton it is found that Coulomb final state interactions
largely dominate the cross section and the form factor is |G^p(4M^2_p)|~1,
which could be a general feature for baryons. In the case of neutral baryons an
interpretation of the non-vanishing cross section at threshold is suggested,
based on quark electromagnetic interaction and taking into account the
asymmetry between attractive and repulsive Coulomb factors. Besides strange
baryon cross sections are compared to U-spin invariance predictions.Comment: 12 pages, 11 figure
Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots
Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga)As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources. © 2017 Author(s)
Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots
Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga)As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources
Recommended from our members
Slow and fast single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line
Hybrid interfaces between distinct quantum systems play a major role in the implementation of quantum networks. Quantum states have to be stored in memories to synchronize the photon arrival times for entanglement swapping by projective measurements in quantum repeaters or for entanglement purification. Here, we analyze the distortion of a single-photon wave packet propagating through a dispersive and absorptive medium with high spectral resolution. Single photons are generated from a single In(Ga)As quantum dot with its excitonic transition precisely set relative to the Cesium D1 transition. The delay of spectral components of the single-photon wave packet with almost Fourier-limited width is investigated in detail with a 200 MHz narrow-band monolithic Fabry-Pérot resonator. Reflecting the excited state hyperfine structure of Cesium, “slow light” and “fast light” behavior is observed. As a step towards room-temperature alkali vapor memories, quantum dot photons are delayed for 5 ns by strong dispersion between the two 1.17 GHz hyperfine-split excited state transitions. Based on optical pumping on the hyperfine-split ground states, we propose a simple, all-optically controllable delay for synchronization of heralded narrow-band photons in a quantum network
Engineering of quantum dot photon sources via electro-elastic fields
The possibility to generate and manipulate non-classical light using the
tools of mature semiconductor technology carries great promise for the
implementation of quantum communication science. This is indeed one of the main
driving forces behind ongoing research on the study of semiconductor quantum
dots. Often referred to as artificial atoms, quantum dots can generate single
and entangled photons on demand and, unlike their natural counterpart, can be
easily integrated into well-established optoelectronic devices. However, the
inherent random nature of the quantum dot growth processes results in a lack of
control of their emission properties. This represents a major roadblock towards
the exploitation of these quantum emitters in the foreseen applications. This
chapter describes a novel class of quantum dot devices that uses the combined
action of strain and electric fields to reshape the emission properties of
single quantum dots. The resulting electro-elastic fields allow for control of
emission and binding energies, charge states, and energy level splittings and
are suitable to correct for the quantum dot structural asymmetries that usually
prevent these semiconductor nanostructures from emitting polarization-entangled
photons. Key experiments in this field are presented and future directions are
discussed.Comment: to appear as a book chapter in a compilation "Engineering the
Atom-Photon Interaction" published by Springer in 2015, edited by A.
Predojevic and M. W. Mitchel
Metal - Insulator transition driven by vacancy ordering in GeSbTe phase change materials
Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphousto-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows
Metal - Insulator transition driven by vacancy ordering in GeSbTe phase change materials
Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows
- …