Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of exploiting such fluctuations to create interesting devices. Using self-consistent tight-binding (SCTB), we study heavily doped highly compensated nanotubes, revealing the spontaneous formation of structures resembling chains of random quantum dots, or nano-scale diode-like elements in series. We also consider truly isolated impurities, revealing simple scaling properties of bound state sizes and energies.Comment: 4 pages RevTeX, 4 PostScript figure

Theoretical Study of One-dimensional Chains of Metal Atoms in Nanotubes

Using first-principles total-energy pseudopotential calculations, we have studied the properties of chains of potassium and aluminum in nanotubes. For BN tubes, there is little interaction between the metal chains and the tubes, and the conductivity of these tubes is through carriers located at the inner part of the tube. In contrast, for small radius carbon nanotubes, there are two types of interactions: charge-transfer (dominant for alkali atoms) leading to strong ionic cohesion, and hybridization (for multivalent metal atoms) resulting in a smaller cohesion. For Al-atomic chains in carbon tubes, we show that both effects contribute. New electronic properties related to these confined atomic chains of metal are analyzed.Comment: 12 pages + 3 figure

BN domains included into carbon nanotubes: role of interface

We present a density functional theory study on the shape and arrangement of small BN domains embedded into single-walled carbon nanotubes. We show a strong tendency for the BN hexagons formation at the simultaneous inclusion of B and N atoms within the walls of carbon nanotubes. The work emphasizes the importance of a correct description of the BN-C frontier. We suggest that BN-C interface will be formed preferentially with the participation of N-C bonds. Thus, we propose a new way of stabilizing the small BN inclusions through the formation of nitrogen terminated borders. The comparison between the obtained results and the available experimental data on formation of BN plackets within the single walled carbon nanotubes is presented. The mirror situation of inclusion of carbon plackets within single walled BN nanotubes is considered within the proposed formalism. Finally, we show that the inclusion of small BN plackets inside the CNTs strongly affects the electronic character of the initial systems, opening a band gap. The nitrogen excess in the BN plackets introduces donor states in the band gap and it might thus result in a promising way for n-doping single walled carbon nanotubes