44 research outputs found
Stochastic Heterostructures in B/N-Doped Carbon Nanotubes
Carbon nanotubes are one-dimensional and very narrow. These obvious facts
imply that under doping with boron and nitrogen, microscopic doping
inhomogeneity is much more important than for bulk semiconductors. We consider
the possibility of exploiting such fluctuations to create interesting devices.
Using self-consistent tight-binding (SCTB), we study heavily doped highly
compensated nanotubes, revealing the spontaneous formation of structures
resembling chains of random quantum dots, or nano-scale diode-like elements in
series. We also consider truly isolated impurities, revealing simple scaling
properties of bound state sizes and energies.Comment: 4 pages RevTeX, 4 PostScript figure
Theoretical Study of One-dimensional Chains of Metal Atoms in Nanotubes
Using first-principles total-energy pseudopotential calculations, we have
studied the properties of chains of potassium and aluminum in nanotubes. For BN
tubes, there is little interaction between the metal chains and the tubes, and
the conductivity of these tubes is through carriers located at the inner part
of the tube. In contrast, for small radius carbon nanotubes, there are two
types of interactions: charge-transfer (dominant for alkali atoms) leading to
strong ionic cohesion, and hybridization (for multivalent metal atoms)
resulting in a smaller cohesion. For Al-atomic chains in carbon tubes, we show
that both effects contribute. New electronic properties related to these
confined atomic chains of metal are analyzed.Comment: 12 pages + 3 figure
BN domains included into carbon nanotubes: role of interface
We present a density functional theory study on the shape and arrangement of
small BN domains embedded into single-walled carbon nanotubes. We show a strong
tendency for the BN hexagons formation at the simultaneous inclusion of B and N
atoms within the walls of carbon nanotubes. The work emphasizes the importance
of a correct description of the BN-C frontier. We suggest that BN-C interface
will be formed preferentially with the participation of N-C bonds. Thus, we
propose a new way of stabilizing the small BN inclusions through the formation
of nitrogen terminated borders. The comparison between the obtained results and
the available experimental data on formation of BN plackets within the single
walled carbon nanotubes is presented. The mirror situation of inclusion of
carbon plackets within single walled BN nanotubes is considered within the
proposed formalism. Finally, we show that the inclusion of small BN plackets
inside the CNTs strongly affects the electronic character of the initial
systems, opening a band gap. The nitrogen excess in the BN plackets introduces
donor states in the band gap and it might thus result in a promising way for
n-doping single walled carbon nanotubes