Crystallographic, magnetic and electrical characteristics of R 3 Ni 8 Sn 4 compounds (R = Y, Nd, Sm, Gd, and Tb)

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Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn_1-xGa_x Solid Solution

Features of structural, electrokinetic, and energy state characteristics of ZrNiSn1-xGax semiconductive solid solution were investigated in the temperature ranges Рў = 80 - 400 K and С… = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn compound as a result of occupation of Zr (4d25s2) atoms in 4a sites by Ni (3d84s2) ones up to ~ 1 % was confirmed. It generated donor levels band D1 in the band gap. It was shown that introduction of Ga (4s24p1) atoms by means of substitution of Sn (5s25p2) ones ordered crystal structure. In this case acceptor defects were generated in 4b sites and it created extended acceptor impurity band Рђ. It was suggested that with generation of acceptor structural defects the vacancies in the Sn (4b) atomic sites simultaneously generated donor defects and formed deep donor band D2 (donor-acceptor pair took place). Keywords: crystal and electronic structures, conductivity, thermopower coefficient.</span