3,142 research outputs found

    Magnus Force in Discrete and Continuous Two-Dimensional Superfluids

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    Motion of vortices in two-dimensional superfluids in the classical limit is studied by solving the Gross-Pitaevskii equation numerically on a uniform lattice. We find that, in the presence of a superflow directed along one of the main lattice periods, vortices move with the superflow on fine lattices but perpendicular to it on coarse ones. We interpret this result as a transition from the full Magnus force in the Galilean-invariant limit to vanishing effective Magnus force in a discrete system, in agreement with the existing experiments on vortex motion in Josephson junction arrays.Comment: 6 pages, 7 figures; published in Phys. Rev.

    Classical thermodynamics of gravitational collapse

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    200 mm Sensor Development Using Bonded Wafers

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    Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to  200 m2\> 200\ m^2 for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than 200 m2200\ m^2 of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than $600\ m^2.Thecostandcomplexityofassemblyofthesedevicesisrelatedtotheareaofeachmodule,whichinturnissetbythesizeofthesiliconsensors.Inadditiontolargearea,thedevicesmustberadiationhard,whichrequirestheuseofsensorsthinnedto200micronsorless.Thecombinationofwaferthinningandlargewaferdiameterisasignificanttechnicalchallenge,andisthesubjectofthiswork.Wedescribeworkondevelopmentofthinsensorson. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on 200 mm$ wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.Comment: 11 page

    Charge Collection and Electrical Characterization of Neutron Irradiated Silicon Pad Detectors for the CMS High Granularity Calorimeter

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    The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-μm\mu\textrm{m} thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about 1016 neqcm−210^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 ∘^\circC to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 ∘^\circC. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60%\% or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90%\% at the lowest fluence, at 600 V. The collected charge close to the fluence of 1016 neqcm−210^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2} exceeds 1 fC at voltages beyond 800 V.Comment: 36 pages, 34 figure
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