Quantum capacitance oscillations in graphene under crossed magnetic and electric fields

Quantum oscillations of metallic systems at low temperatures are one of the key rules to experimentally access their electronic properties, such as energy spectrum, scattering mechanisms, geometry of Fermi surface and many other features. The importance of these knowledge is enormous, since from these a thorough understanding of the anomalous Hall effect, thermopower and Nernst coefficients, just to name a few, is possible; and from those knowledge, plenty of applications arise as emerging technologies. In this direction, the present contribution focuses on a complete description of quantum capacitance oscillations of monolayer and bilayer graphene under crossed electric and magnetic fields, considering to this purpose the Lifshitz-Onsager quantization condition. We found a closed theoretical expression for the quantum capacitance and highlight their amplitude, period and phase —important parameters to access the electronic properties of graphene. These results open doors for further experimental studies

Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model

In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap