Hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

This is the author accepted manuscript. The final version is available from the Royal Society of Chemistry via the DOI in this recordOrgano-metal halide perovskite field-effect transistors present serious challenges in terms of device stability and hysteresis in the current-voltage characteristics. Migration of ions located at grain boundaries and surface defects in the perovskite film are the main reasons for instability and hysteresis issues. Here, we introduce a perovskite grains molecular cross-linking approach combined with amine-based surface passivation to face these issues. Molecular cross-linking was achieved through hydrogen bond interactions between perovskite halogens and dangling bonds present at grain boundaries and a hydrophobic cross-linker, namely diethyl-(12-phosphonododecyl)phosphonate, added to the precursor solution. With our approach we obtained smooth and compact perovskite layers composed of few and tightly bound grains hence significantly suppressing the generation and migration of ions. Moreover, we obtained efficient surface passivation of the perovskite films upon surface treatment with an amine-bearing polymer, namely polyethylenimine ethoxylated. With our synergistic grain and surface passivation approach we were able to demonstrate the first perovskite transistor with complete lack of hysteresis and unprecedented stability upon continuous operation under ambient conditions. Added to the merits are its ambipolar transport of opposite carriers with balanced hole and electron mobilities of 4.02 and 3.35 cm2 V−1 s−1, respectively, its high Ion/Ioff ratio >104 and the lowest sub-thresshold swing of 267 mV dec-1 reported to date for any perovskite transistor. These remarkable achievements obtained through a cost-effective molecular cross-linking of grains combined with amine-based surface passivation in the perovskite films open new eras and pave the way for the practical application of perovskite transistors on low-cost electronic circuits.European Unio

High-humidity processed perovskite solar cells

Perovskite solar cells (PSCs) are considered the next-in-line technology in the solar industry. This technology can reduce the cost of solar energy to an unprecedented level given their remarkably high efficiency and ease of manufacturing. Hitherto, many studies have preferred well-regulated inert conditions or a low-humidity atmosphere (relative humidity < 30%) for fabricating highly efficient PSCs to avoid the adverse impact of humidity on a perovskite film. This is because humidity is the main reason for perovskite instability and can alter the film growth kinetics during the fabrication process, thereby ultimately affecting the morphology of the grown film and the device performance. The requirement for an inert or low-humidity environment can increase the capital costs of setting up the fabrication facilities and hamper the large-scale production of PSCs. Therefore, efforts have been devoted to preparing PSC devices in a high-humidity environment to comprehend perovskite crystal growth kinetics and improve the morphological properties and stability of the perovskite film. This review highlights the modifications implemented towards (1) perovskite materials, (2) charge-selective layers, and (3) deposition protocols by spin-coating, to adapt a high-humidity atmosphere (RH ≥ 30%) for developing efficient PSCs. The progress of scalable processing methods such as blade-coating, inkjet printing, slot-die coating, and spray-coating, and the translation of spin-coating-modified protocols into these methods are also discussed. Finally, this review provides the remaining challenges to realizing the high-humidity fabrication of PSCs for commercialization

Carbon nanodots as electron transport materials in organic light emitting diodes and solar cells

Charge injection and transport interlayers play a crucial role in many classes of optoelectronics, including organic and perovskite ones. Here, we demonstrate the beneficial role of carbon nanodots, both pristine and nitrogen-functionalized, as electron transport materials in organic light emitting diodes (OLEDs) and organic solar cells (OSCs). Pristine (referred to as C-dots) and nitrogen-functionalized (referred to as NC-dots) carbon dots are systematically studied regarding their properties by using cyclic voltammetry, Fourier-transform infrared (FTIR) and UV–Vis absorption spectroscopy in order to reveal their energetic alignment and possible interaction with the organic semiconductor’s emissive layer. Atomic force microscopy unravels the ultra-thin nature of the interlayers. They are next applied as interlayers between an Al metal cathode and a conventional green-yellow copolymer—in particular, (poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(1,4-benzo-{2,1′,3}-thiadiazole)], F8BT)—used as an emissive layer in fluorescent OLEDs. Electrical measurements indicate that both the C-dot- and NC-dot-based OLED devices present significant improvements in their current and luminescent characteristics, mainly due to a decrease in electron injection barrier. Both C-dots and NC-dots are also used as cathode interfacial layers in OSCs with an inverted architecture. An increase of nearly 10% in power conversion efficiency (PCE) for the devices using the C-dots and NC-dots compared to the reference one is achieved. The application of low-cost solution-processed materials in OLEDs and OSCs may contribute to their wide implementation in large-area applications