Bi-Stability, Hysteresis, and Memory of Voltage-Gated Lysenin Channels

Lysenin, a 297 amino acid pore-forming protein extracted from the coelomic fluid of the earthworm E. foetida, inserts constitutively open large conductance channels in natural and artificial lipid membranes containing sphingomyelin. The inserted channels show voltage regulation and slowly close at positive applied voltages. We report on the consequences of slow voltage-induced gating of lysenin channels inserted into a planar Bilayer Lipid Membrane (BLM), and demonstrate that these pore-forming proteins constitute memory elements that manifest gating bi-stability in response to variable external voltages. The hysteresis in macroscopic currents dynamically changes when the time scale of the voltage variation is smaller or comparable to the characteristic conformational equilibration time, and unexpectedly persists for extremely slow-changing external voltage stimuli. The assay performed on a single lysenin channel reveals that hysteresis is a fundamental feature of the individual channel unit and an intrinsic component of the gating mechanism. The investigation conducted at different temperatures reveals a thermally stable reopening process, suggesting that major changes in the energy landscape and kinetics diagram accompany the conformational transitions of the channels. Our work offers new insights on the dynamics of pore-forming proteins and provides an understanding of how channel proteins may form an immediate record of the molecular history which then determines their future response to various stimuli. Such new functionalities may uncover a link between molecular events and macroscopic processing and transmission of information in cells, and may lead to applications such as high density biologically-compatible memories and learning networks

High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon

Monolithic integration of infrared photodetectors on a silicon platform is a promising solution for the development of scalable and affordable photodetectors and infrared focal plane arrays. We report on integration of submonolayer quantum dot quantum cascade detectors (SML QD QCDs) on Si substrates via direct growth. Threading dislocation density has been reduced to the level of ~10 7 cm -2 with the high-quality GaAs-on-Si virtual substrate. We also conducted a morphology analysis for the SML QD QCDs through a transmission electron microscope strain contrast image and to the best of our knowledge, high quality InGaAs/GaAs SML QDs were clearly observed on silicon for the first time. Photoluminescence decay time of the as-grown SML QD QCDs on Si was measured to be around 300 ps, which is comparable to the reference QCDs on lattice-matched GaAs substrates. With the high-quality III-V epitaxial layers and SML QDs, the quantum cascade detectors on Si achieved a normal incident photoresponse temperature up to 160 K under zero bias

Algorithm based high composition-controlled growths of GeSn on GaAs (001) via molecular beam epitaxy

The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve pseudomorph GeSn compositions near 11% before partial relaxation of the structure and a continued gradient to 16 % GeSn. Using algorithmic-based control and calibration, the ability to consistently and easily grow GeSn compositions above 20 % will likely become very possible. In this report, we use X-ray diffraction and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with the laser excitation intensity increasing four orders in magnitude. The 7-nm QW PL also has a larger blueshift and FWHM variation than the 15-nm QW as the temperature increases from 10 to ~50 K. Finally, simulations of this system which correlate with the experimental observations indicate that a thin QW must be more affected by interface fluctuations and their resulting potential fluctuations than a thick QW. This work provides useful information on guiding the growth to achieve optimized InGaAs/InAlAs QWs for applications with different QW thicknesses

Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon

An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm.Engineering and Physical Sciences Research Council https://doi.org/10.13039/501100000266Royal Academy of Engineering https://doi.org/10.13039/501100000287National Science Foundation of the U.S.Peer Reviewe

State filling dependent luminescence in hybrid tunnel coupled dot-well structures

A strong dependence of quantum dot (QD)–quantum well (QW) tunnel coupling on the energy band alignment is established in hybrid 'In''As'/'GA''AS'-'IN IND. x''GA IND. 1-x''AS'/'GA''AS' dot–well structures by changing the QW composition to shift the QW energy through the QD wetting layer (WL) energy. Due to this coupling a rapid carrier transfer from the QW to the QD excited states takes place. As a result, the QW photoluminescence (PL) completely quenches at low excitation intensities. The threshold intensities for the appearance of the QW PL strongly depend on the relative position of the QW excitonic energy with respect to the WL ground state and the QD ground state energies. These intensities decrease by orders of magnitude as the energy of the QW increases to approach that of the WL due to the increased efficiency for carrier tunneling into the WL states as compared to the less dense QD states below the QW energy.MWN - Material World NetworkNational Science Foundation of the U.S. (DMR-1008107)Deutsche Forschungsgemeinschaft (Li 580/8-1)Korea Foundation for International Cooperation of Science & Technology (Global Research Laboratory project - K20815000003)

Abnormal photoluminescence for GaAs/Al 0.2 Ga 0.8 As quantum dot - ring hybrid nanostructure grown by droplet epitaxy

The optical properties have been investigated for the GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructures grown by droplet epitaxy, in which each nanostructure consists of four quantum dots (QDs) sitting on a distinct ring of GaAs. A blueshift and narrowing of the photoluminescence (PL) spectra along with the nonlinear decay of the time-resolved PL curves of the QDs have been observed. These abnormal PL behaviors are caused by the unique state filling effect correlated with the quantum dot-ring structure feature, which is strongly affected by carrier transfer from smaller dots to larger dots via the wetting ring in the GaAs/Al0.2Ga0.8As hybrid structure

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved