4 research outputs found
Quantum dot lasers and relevant nanoheterostructures
Spectral and power characteristics of QD stripe lasers operating in
two-state lasing regime have been studied in a wide range of operation
conditions. It was demonstrated that neither self-heating nor increase
of the homogeneous broadening are responsible for quenching of the
ground-state lasing beyond the two-state lasing threshold. It was found
that difference in electron and hole capture rates strongly affects
light-current curve. Modulation p-type doping is shown to enhance the
peak power of GS lasing transition. Microring and microdisk structures
(D = 4-9 mu m) comprising 1.3 mu m InAs/InGaAs quantum dots have been
fabricated and studied by mu-PL and NSOM. Ground-state lasing was
achieved well above root temperature (up to 380 K). Effect of inner
diameter on threshold characteristics was evaluated