10 research outputs found

    Additional file 3: of High expression of Ras-related protein 1A promotes an aggressive phenotype in colorectal cancer via PTEN/FOXO3/CCND1 pathway

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    Figure S2. RAP1A overexpression promotes the growth of DLD-1 CRC cells in vitro. a: RAP1A expression is higher in overexpression (OE) group than that in negative control (NC) group. b: the relative 490 nm absorbance of OE group increases more quickly than that of NC group within five days. c: RAP1A overexpression has no significant impact on the phase fraction in DLD-1 cells. d: the apoptosis rates of OE group are lower than that of NC group. e: the clone numbers of OE group are more than that of NC group. (TIF 4391 kb

    Additional file 2: of High expression of Ras-related protein 1A promotes an aggressive phenotype in colorectal cancer via PTEN/FOXO3/CCND1 pathway

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    Figure S1. Upper: The fluorescence microscopy detects the transfection efficiency of each shRNA (KD1, KD2 and KD3). Lower: qRT-PCR assay demonstrates the mRNA level of RAP1A gene is lowest in SW620 cells transfected with KD3 shRNA. (TIF 19639 kb

    Multiarmed Aromatic Ammonium Salts Boost the Efficiency and Stability of Inverted Organic Solar Cells

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    Inverted organic solar cells (OSCs) have attracted much attention because of their outstanding stability, with zinc oxide (ZnO) being commonly used as the electron transport layer (ETL). However, both surface defects and the photocatalytic effect of ZnO could lead to serious photodegradation of acceptor materials. This, in turn, hampers the improvement of the efficiency and stability in OSCs. Herein, we developed a multiarmed aromatic ammonium salt, namely, benzene-1,3,5-triyltrimethanaminium bromide (PhTMABr), for modifying ZnO. This compound possesses mild weak acidity aimed at removing the residual amines present within ZnO film. In addition, the PhTMABr could also passivate surface defects of ZnO through multiple hydrogen-bonding interactions between its terminal amino groups and the oxygen anion of ZnO, leading to a better interface contact, which effectively enhances charge transport. As a result, an efficiency of 18.75% was achieved based on the modified ETL compared to the bare ZnO (PCE = 17.34%). The devices utilizing the modified ZnO retained 87% and 90% of their initial PCE after thermal stress aging at 65 °C for 1500 h and continuous 1-sun illumination with maximum power point (MPP) tracking for 1780 h, respectively. Importantly, the extrapolated T80 lifetime with MPP tracking exceeds 10 000 h. The new class of materials employed in this work to modify the ZnO ETL should pave the way for enhancing the efficiency and stability of OSCs, potentially advancing their commercialization process
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