Tailoring of the Interfacial Dzyaloshinskii–Moriya Interaction in Perpendicularly Magnetized Epitaxial Multilayers by Crystal Engineering

The interplay between the interfacial crystalline structure and Dzyaloshinskii–Moriya interaction (DMI) was investigated by Fe insertion in epitaxial Pt/Co/Ir perpendicular magnetized multilayers. The experimental results with the support of first-principles calculation indicate that the Fe/Ir interface exhibits a positive interfacial DMI (iDMI) originating from the fcc crystalline structure inserted by 2 monolayers (ML) Fe, while a negative one from the structure with a layer shifting of 1-ML Fe insertion. The total iDMI of the multilayers increases (decreases) due to the additive enhancement (competitive counteraction) between the iDMI of Fe/Ir and Pt/Co interfaces. Comparing the iDMI of single-crystalline and textured multilayers, the iDMI of multilayers is found to be particularly sensitive to the crystallinity nearby the heterointerfaces. This work is of vital importance to reveal a deeper insight into the physical mechanism of the iDMI and provides a viable strategy for tailoring the iDMI of the multilayers by crystal engineering

Controllable Spin–Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Electrically generated spin–orbit torque (SOT) has emerged as a powerful pathway to control magnetization for spintronic applications including memory, logic, and neurocomputing. However, the requirement of external magnetic fields, together with the ultrahigh current density, is the main obstacle for practical SOT devices. In this paper, we report that the field-free SOT-driven magnetization switching can be successfully realized by interfacial ion absorption in perpendicular Ta/CoFeB/MgO multilayers. Besides, the tunable SOT efficiency exhibits a strong dependence on interfacial Ti insertion thicknesses. Polarized neutron reflection measurements demonstrate the existence of canted magnetization with Ti inserted, which leads to deterministic magnetization switching. In addition, interfacial characterization and first-principles calculations reveal that B absorption by the Ti layer is the main cause behind the enhanced interfacial transparency, which determines the tunable SOT efficiency. Our findings highlight an attractive scheme to a purely electric control spin configuration, enabling innovative designs for SOT-based spintronics via interfacial engineering