CNT Thin Films Based on Epoxy Mixtures: Fabrication, Electrical Characteristics

Received: 15.03.2024. Revised: 01.04.2024. Accepted: 03.04.2024. Available online: 10.04.2024.An alternative method for producing thin-film transistors was presented.The carrier mobility was 28.87 cm²/V∙s, and the transistor switching frequency was 2.2 MHz.CNT-epoxy mixtures have potential for thin-film device production, but require improved dispersion and film deposition methods.The simple scaling of silicon transistors no longer ensures the advantages of high energy efficiency, driving research into nanotechnologies beyond silicon. Specifically, digital circuits based on carbon nanotube (CNT) fieldeffect transistors promise significant advantages in energy efficiency. However, the inability to perfectly control internal nanoscale defects and the variability of carbon nanotubes hinder the realization of very largescale integrated systems. In this study, we investigated a novel method for fabricating transistors based on carbon nanotubes (CNTs) using epoxy mixtures, obtained the electrical properties of the transistors, and compared their microstructure and composition via the scanning electron microscopy. The carrier mobility on epoxy-based transistors was 28.87 cm²/V∙s, and the transistor switching frequency was 2.2 MHz. The samples exhibited electrical and physical stability over an extended period of time. The use of carbon nanotubes in epoxy resin as a conducting layer for transistors opens significant prospects in the field of electronics. The CNT-epoxy mixture technology allows for more flexible and rapid fabrication of thin-film transistors compared to classical methods. However, it is not appropriate to speak of a complete replacement; in this study, we present an alternative method for producing thin-film transistors, which may be of interest for specific purposes.The research was financially supported by a state assignment (scientific code FZWU-2023-0002)