5 research outputs found
Enhanced SERS Stability of R6G Molecules with Monolayer Graphene
In this work, we used monolayer graphene,
either underneath or on top of the R6G molecules, to enhance the stability
and reproducibility of surface enhanced Raman spectroscopy (SERS).
The time evolution of characteristic peaks of the organic molecules
was monitored using Raman spectroscopy under continuous light irradiation
to quantitatively characterize the photostability. Graphene underneath
the organic molecules inhibits the substrate-induced fluctuations;
and graphene on top of the organic molecules encapsulates and isolates
them from ambient oxygen, greatly enhancing the photostability. Our
results showed that the average lifespan of R6G molecules with graphene
encapsulation can be increased by about 6-fold under high laser power
density (3.67 Ć 10<sup>6</sup> W/cm<sup>2</sup>) and is less
dependent on the power density of light irradiation
Multifunctional Sensor Based on Porous Carbon Derived from MetalāOrganic Frameworks for Real Time Health Monitoring
Flexible and sensitive sensors that
can detect external stimuli such as pressure, temperature, and strain
are essential components for applications in health diagnosis and
artificial intelligence. Multifunctional sensors with the capabilities
of sensing pressure and temperature simultaneously are highly desirable
for health monitoring. Here, we have successfully fabricated a flexible
and simply structured bimodal sensor based on metalāorganic
frameworks (MOFs) derived porous carbon (PC) and polydimethylsiloxane
(PDMS) composite. Attributed to the porous structure of PC/PDMS composite,
the fabricated sensor exhibits high sensitivity (15.63 kPa<sup>ā1</sup>), fast response time (<65 ms), and high durability (ā¼2000
cycles) for pressure sensing. Additionally, its application in detecting
human motions such as subtle wrist pulses in real time has been demonstrated.
Furthermore, the as-prepared device based on the PC/PDMS composite
exhibits a good sensitivity (>0.11 Ā°C<sup>ā1</sup>)
and fast response time (ā¼100 ms), indicating its potential
application in sensing temperature. All of these capabilities indicate
its great potential in the applications of health monitoring and artificial
skin for artificial intelligence system
Mass Transport Mechanism of Cu Species at the Metal/Dielectric Interfaces with a Graphene Barrier
The interface between the metal and dielectric is an indispensable part in various electronic devices. The migration of metallic species into the dielectric can adversely affect the reliability of the insulating dielectric and can also form a functional solid-state electrolyte device. In this work, we insert graphene between Cu and SiO<sub>2</sub> as a barrier layer and investigate the mass transport mechanism of Cu species through the graphene barrier using density functional theory calculations, second-ion mass spectroscopy (SIMS), capacitanceāvoltage measurement, and cyclic voltammetry. Our theoretical calculations suggest that the major migration path for Cu species to penetrate through the multiple-layered graphene is the overlapped defects larger than 0.25 nm<sup>2</sup>. The depth-profile SIMS characterizations indicate that the ācriticalā thickness of the graphene barrier for completely blocking the Cu migration is 5 times smaller than that of the conventional TaN barrier. Capacitanceāvoltage and cyclic voltammetry measurement reveal that the electrochemical reactions at the Cu/SiO<sub>2</sub> interface become a rate-limiting factor during the bias-temperature stressing process with the use of a graphene barrier. These studies provide a distinct roadmap for designing controllable mass transport in solid-state electrolyte devices with the use of a graphene barrier
Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe<sub>2</sub>/Perovskite Heterojunctions
We
report on the large-scale synthesis of polycrystalline multilayer
PtSe<sub>2</sub> film with typical semimetallic characteristics. With
the availability of the large-area film, we constructed a heterojunction
composed of multilayer PtSe<sub>2</sub> and Cs-doped FAPbI<sub>3</sub>, which can function as a self-driven photodetector in a broadband
wavelength from the ultraviolet to the near-infrared region. Further
photoresponse analysis revealed that the heterojunction device showed
outstanding photosensitive characteristics with a large <i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub> ratio of 5.7 Ć
10<sup>3</sup>, high responsivity of 117.7 mAāÆW<sup>ā1</sup>, and decent specific detectivity of 2.91 Ć 10<sup>12</sup> Jones
at zero bias. More importantly, the rise/fall times were estimated
to be 78/60 ns, rendering our device the fastest device among perovskite-2D
photodetectors reported to date. In addition, it was also observed
that the PtSe<sub>2</sub>/perovskite photodetector can almost retain
its photoresponse properties after storage in ambient conditions for
3 weeks. This study suggests the potential of the present PtSe<sub>2</sub>/perovskite heterojunction for future air-stable ultrafast
photodetecting applications
Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe<sub>2</sub> Dirac Semimetal
Next-generation
mid-infrared (MIR) imaging chips demand free-cooling
capability and high-level integration. The rising two-dimensional
(2D) semimetals with excellent infrared (IR) photoresponses are compliant
with these requirements. However, challenges remain in scalable growth
and substrate-dependence for on-chip integration. Here, we demonstrate
the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal
using a low-temperature self-stitched epitaxy (SSE) approach. The
low formation energy between two precursors facilitates low-temperature
multiple-point nucleation (ā¼300 Ā°C), growing up, and merging,
resulting in self-stitching of PdTe2 domains into a continuous
film, which is highly compatible with back-end-of-line (BEOL) technology.
The uncooled on-chip PdTe2/Si Schottky junction-based photodetector
exhibits an ultrabroadband photoresponse of up to 10.6 Ī¼m with
a large specific detectivity. Furthermore, the highly integrated device
array demonstrates high-resolution room-temperature imaging capability,
and the device can serve as an optical data receiver for IR optical
communication. This study paves the way toward low-temperature growth
of 2D semimetals for uncooled MIR sensing