2,104 research outputs found
Recent Developments in Parallelization of the Multidimensional Integration Package DICE
DICE is a general purpose multidimensional numerical integration package.
There can be two ways in the parallelization of DICE, "distributing random
numbers into workers" and "distributing hypercubes into workers". Furthermore,
there can be the combination of both ways. So far, we had developed the
parallelization code using the former way and reported it in ACAT2002 in
Moscow. Here, we will present the recent developments of parallelized DICE in
the latter way as the 2nd stage of our parallelization activities.Comment: 5 pages, 2 figures, Talk given at the X International Workshop on
Advanced Computing and Analysis Techniques in Physics Research, ACAT 2005,
DESY-Zeuthen, Germany, 22-27 May 200
Injection and detection of spin in a semiconductor by tunneling via interface states
Injection and detection of spin accumulation in a semiconductor having
localized states at the interface is evaluated. Spin transport from a
ferromagnetic contact by sequential, two-step tunneling via interface states is
treated not in itself, but in parallel with direct tunneling. The spin
accumulation induced in the semiconductor channel is not suppressed, as
previously argued, but genuinely enhanced by the additional spin current via
interface states. Spin detection with a ferromagnetic contact yields a weighted
average of the spin accumulation in the channel and in the localized states. In
the regime where the spin accumulation in the localized states is much larger
than that in the channel, the detected spin signal is insensitive to the spin
accumulation in the localized states and the ferromagnet probes the spin
accumulation in the semiconductor channel.Comment: 7 pages, 2 figures. Theory onl
Thermal spin current and magnetothermopower by Seebeck spin tunneling
The recently observed Seebeck spin tunneling, the thermoelectric analog of
spin-polarized tunneling, is described. The fundamental origin is the spin
dependence of the Seebeck coefficient of a tunnel junction with at least one
ferromagnetic electrode. Seebeck spin tunneling creates a thermal flow of
spin-angular momentum across a tunnel barrier without a charge tunnel current.
In ferromagnet/insulator/semiconductor tunnel junctions this can be used to
induce a spin accumulation (\Delta \mu) in the semiconductor in response to a
temperature difference (\Delta T) between the electrodes. A phenomenological
framework is presented to describe the thermal spin transport in terms of
parameters that can be obtained from experiment or theory. Key ingredients are
a spin-polarized thermoelectric tunnel conductance and a tunnel spin
polarization with non-zero energy derivative, resulting in different Seebeck
tunnel coefficients for majority and minority spin electrons. We evaluate the
thermal spin current, the induced spin accumulation and \Delta\mu/\Delta T,
discuss limiting regimes, and compare thermal and electrical flow of spin
across a tunnel barrier. A salient feature is that the thermally-induced spin
accumulation is maximal for smaller tunnel resistance, in contrast to the
electrically-induced spin accumulation that suffers from the impedance mismatch
between a ferromagnetic metal and a semiconductor. The thermally-induced spin
accumulation produces an additional thermovoltage proportional to \Delta\mu,
which can significantly enhance the conventional charge thermopower. Owing to
the Hanle effect, the thermopower can also be manipulated with a magnetic
field, producing a Hanle magnetothermopower.Comment: 10 pages, 3 figures, 1 tabl
Anomalous Quartic and Couplings in Collision With Initial Beams and Final State Polarizations
The constraints on the anomalous quartic and
gauge boson couplings are investigated through the processes
and . Considering the
longitudinal and transverse polarization states of the final W or Z boson and
incoming beam polarizations we find 95% confidence level limits on the
anomalous coupling parameters and with an integrated luminosity
of 500 and =0.5, 1 TeV energies. Assuming the
couplings are independent of the
couplings we show that the longitudinal polarization state of the final gauge
boson improves the sensitivity to anomalous couplings by a factor of 2-3
depending on energy and coupling. An extra enhancement in sensitivity by a
factor of 1.3 comes from a set of initial beam polarizations
Distillation of Entanglement between Distant Systems by Repeated Measurements on Entanglement Mediator
A recently proposed purification method, in which the Zeno-like measurements
of a subsystem can bring about a distillation of another subsystem in
interaction with the former, is utilized to yield entangled states between
distant systems. It is shown that the measurements of a two-level system
locally interacting with other two spatially separated not coupled subsystems,
can distill entangled states from the latter irrespectively of the initial
states of the two subsystems.Comment: 11 pages, 2 figures; the version accepted for publication in Phys.
Rev.
Lateral Effects in Fermion Antibunching
Lateral effects are analyzed in the antibunching of a beam of free
non-interacting fermions. The emission of particles from a source is
dynamically described in a 3D full quantum field-theoretical framework. The
size of the source and the detectors, as well as the temperature of the source
are taken into account and the behavior of the visibility is scrutinized as a
function of these parameters.Comment: 22 pages, 4 figure
RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance
The radio-frequency (RF) voltage amplification property of a tunnel
magnetoresistance device driven by an RF external-magnetic-field-induced
ferromagnetic resonance was studied. The proposed device consists of a magnetic
tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The
input RF voltage applied to the waveguide can excite the resonant dynamics in
the free layer magnetization, leading to the generation of an output RF voltage
under a DC bias current. The dependences of the RF voltage gain on the static
external magnetic field strength and angle were systematically investigated.
The design principles for the enhancement of the gain factor are also
discussed.Comment: 12 pages, 3 figure
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