The characteristics of granites in the Gaofeng and Baocheng areas, Hainan Province, China: response to subduction of the Tethyan South China Sea

During the early Mesozoic Era there was intense magmatic activity near Hainan Island, South China. As a result, the granites of Hainan Island provide information on, and are suitable material to potentially improve understanding of the Cretaceous tectonic environment of the northern margin of the South China Sea. The Gaofeng and Baocheng intrusions are composed mainly of medium- to fine-grained biotite adamellite (Baocheng) and granodiorite (Gaofeng). The two intrusions yielded U–Pb LA-ICP-MS zircon ages of 107.7 ± 6.1 Ma (Gaofeng) and 105.8 ± 2.4 Ma (Baocheng). Regarding the major elements, the Gaofeng and Baocheng intrusions had medium Si and alkali contents and high Ca, Mg, and Al contents, with an aluminum saturation index of 0.95–1.03 and 1.05–1.30. The trace element and rare earth element (REE) characteristics showed that the two intrusions have intense heavy REE/light REE (HREE/LREE) fractionation, LREE enrichment, HREE depletion, and weak negative Eu anomalies. The intrusions were enriched in high field-strength elements and depleted in large ion lithophile elements. These geochemical characteristics indicate that the Hainan Province was in a tectonic subduction environment in the late Yanshanian period. Multiple geochemical characteristics demonstrate that the granites in the Hainan Province were formed by a different mechanism and in a different setting from those in Fujian and Zhejiang. The late Mesozoic granites of Fujian and Zhejiang were formed by the Western Pacific subduction. However, Hainan Island was under an arc environment formed by the northward subduction of the Tethyan-South China Sea during the Cretaceous leading to emplacement of the Gaofeng and Baocheng intrusions.</p

Nonlocal delay gives rise to vegetation patterns in a vegetation-sand model

The vegetation pattern generated by aeolian sand movements is a typical type of vegetation patterns in arid and semi-arid areas. This paper presents a vegetation-sand model with nonlocal interaction characterized by an integral term with a kernel function. The instability of the Turing pattern was analyzed and the conditions of stable pattern occurrence were obtained. At the same time, the multiple scales method was applied to obtain the amplitude equations at the critical value of Turing bifurcation. The spatial distributions of vegetation under different delays were obtained by numerical simulation. The results revealed that the vegetation biomass increased as the interaction intensity decreased or as the nonlocal interaction distance increased. We demonstrated that the nonlocal interaction between vegetation and sand is a crucial mechanism for forming vegetation patterns, which provides a theoretical basis for preserving and restoring vegetation

Large area growth and electrical properties of p-type WSe2 atomic layers.

Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe(2) atomic layers remains a challenge. The studies on WSe(2) are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe(2) atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe(2) film with the lateral dimensions up to ∼ 1 cm(2). Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe(2). Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(-1) s(-1) for monolayer and up to 350 cm(2) V(-1) s(-1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials

Microstructure and Mechanical Properties of Magnetron Sputtering TiN-Ni Nanocrystalline Composite Films

In this paper, TiN-Ni nanostructured composite films with different Ni contents are prepared using the magnetron sputtering method. The composition, microstructure, and mechanical properties of composite films are analyzed using an X-ray energy spectrometer (EDS), a scanning electron microscope (SEM), X-ray diffraction technology (XRD), a transmission electron microscope (TEM), and nanoindentation. All the films grow in a columnar crystal structure. There are only TiN diffraction peaks in the XRD spectrum, and no diffraction peaks of Ni and its compounds are observed. The addition of the Ni element disrupts the integrity of TiN lattice growth, resulting in a decrease in the grain size from 60 nm in TiN to 25 nm at 20.6% Ni. The film with a Ni content of 12.4 at.% forms a nanocomposite structure in which the nanocrystalline TiN phase (nc-TiN) is surrounded by the amorphous Ni (a-Ni) phase. The formation of nc-TiN/a-Ni nanocomposite structures relies on the good wettability of Ni on TiN ceramics. The hardness and elastic modulus of the film gradually decrease with the increase in Ni content, but the toughness is improved. The hardness and elastic modulus decrease from 19.9 GPa and 239.5 GPa for TiN film to 15.4 GPa and 223 GPa at 20.6 at.% Ni film, respectively, while the fracture toughness increases from 1.5 MPa m1/2 to 2.0 MPa m1/2. The soft and ductile Ni phase enriched at the TiN grain boundaries hinders the propagation of cracks in the TiN phase, resulting in a significant increase in the film’s toughness. The research results of this paper provide support for the design of TiN-Ni films with high strength and toughness and the understanding of the formation mechanism of nanocomposite structures.info:eu-repo/semantics/publishedVersio

A Highly Overmoded Structure for Hundred-Kilowatt-Class &lt;italic&gt;Ka&lt;/italic&gt;-Band Extended Interaction Klystron

Here, we report on the development of highly overmoded structure for a millimeter-wave (MMW) extended interaction klystron (EIK). To enhance electron beam loading, a new method for designing an oversized beam tunnel in a large cavity by concentrating the axial field is demonstrated. The transmission and oscillation characteristics of the interaction circuit operating in the quasi-TM04 mode are tested by the developed mode conversion circuit. Results suggest that a five-cavity EIK based on this highly overmoded structure can achieve an output power of 289 kW at 32.92 GHz with a saturated gain of 51.6 dB by injecting a 3.3-mm-diameter electron beam with a current of 18 A. The output power exceeds 100 kW at a bandwidth of 100 MHz.</p