Electronic transport in EuB6_6

EuB$_6$ is a magnetic semiconductor in which defects introduce charge carriers into the conduction band with the Fermi energy varying with temperature and magnetic field. We present experimental and theoretical work on the electronic magnetotransport in single-crystalline EuB$_6$. Magnetization, magnetoresistance and Hall effect data were recorded at temperatures between 2 and 300 K and in magnetic fields up to 5.5 T. The negative magnetoresistance is well reproduced by a model in which the spin disorder scattering is reduced by the applied magnetic field. The Hall effect can be separated into an ordinary and an anomalous part. At 20 K the latter accounts for half of the observed Hall voltage, and its importance decreases rapidly with increasing temperature. As for Gd and its compounds, where the rare-earth ion adopts the same Hund's rule ground state as Eu$^{2+}$ in EuB$_{6}$, the standard antisymmetric scattering mechanisms underestimate the $size$ of this contribution by several orders of magnitude, while reproducing its $shape$ almost perfectly. Well below the bulk ferromagnetic ordering at $T_C$ = 12.5 K, a two-band model successfully describes the magnetotransport. Our description is consistent with published de Haas van Alphen, optical reflectivity, angular-resolved photoemission, and soft X-ray emission as well as absorption data, but requires a new interpretation for the gap feature deduced from the latter two experiments.Comment: 35 pages, 12 figures, submitted to PR

Kondo effect in systems with dynamical symmetries

This paper is devoted to a systematic exposure of the Kondo physics in quantum dots for which the low energy spin excitations consist of a few different spin multiplets $|S_{i}M_{i}>$. Under certain conditions (to be explained below) some of the lowest energy levels $E_{S_{i}}$ are nearly degenerate. The dot in its ground state cannot then be regarded as a simple quantum top in the sense that beside its spin operator other dot (vector) operators ${\bf R}_{n}$ are needed (in order to fully determine its quantum states), which have non-zero matrix elements between states of different spin multiplets $\ne 0$. These "Runge-Lenz" operators do not appear in the isolated dot-Hamiltonian (so in some sense they are "hidden"). Yet, they are exposed when tunneling between dot and leads is switched on. The effective spin Hamiltonian which couples the metallic electron spin ${\bf s}$ with the operators of the dot then contains new exchange terms, $J_{n} {\bf s} \cdot {\bf R}_{n}$ beside the ubiquitous ones $J_{i} {\bf s}\cdot {\bf S}_{i}$. The operators ${\bf S}_{i}$ and ${\bf R}_{n}$ generate a dynamical group (usually SO(n)). Remarkably, the value of $n$ can be controlled by gate voltages, indicating that abstract concepts such as dynamical symmetry groups are experimentally realizable. Moreover, when an external magnetic field is applied then, under favorable circumstances, the exchange interaction involves solely the Runge-Lenz operators ${\bf R}_{n}$ and the corresponding dynamical symmetry group is SU(n). For example, the celebrated group SU(3) is realized in triple quantum dot with four electrons.Comment: 24 two-column page