Additional file 1: of Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Supporting information. (DOCX 298 KB

Tunable Single-Photon Emission with Wafer-Scale Plasmonic Array

Bright, scalable, and deterministic single-photon emission (SPE) is essential for quantum optics, nanophotonics, and optical information systems. Recently, SPE from hexagonal boron nitride (h-BN) has attracted intense interest because it is optically active and stable at room temperature. Here, we demonstrate a tunable quantum emitter array in h-BN at room temperature by integrating a wafer-scale plasmonic array. The transient voltage electrophoretic deposition (EPD) reaction is developed to effectively enhance the filling of single-crystal nanometals in the designed patterns without aggregation, which ensures the fabricated array for tunable performances of these single-photon emitters. An enhancement of ∼500% of the SPE intensity of the h-BN emitter array is observed with a radiative quantum efficiency of up to 20% and a saturated count rate of more than 4.5 × 106 counts/s. These results suggest the integrated h-BN-plasmonic array as a promising platform for scalable and controllable SPE photonics at room temperature

Thickness-Dependent Optical Constants and Annealed Phase Transitions of Ultrathin ZnO Films

The thickness-dependent optical constants and annealed phase transitions of atomic-layer-deposited ZnO ultrathin films with a thickness of less than 50 nm have been demonstrated by spectroscopic ellipsometry. The thickness dependence of refractive index and extinction coefficient was discussed, and the mechanisms were given in the molecule level based on previous reports. Furthermore, the optical properties of ZnO ultrathin films varied with annealing temperatures, and the phase transition was found at high annealing temperature. The thickness of the ultrathin films decreased obviously, and the refractive index of the ultrathin films changed a lot after annealing at high temperature while Zn₂SiO₄ formed at a temperature above 800 °C. The low phase transition temperature of Zn₂SiO₄ may be due to the ultrathin scale effect. What’s more, photoluminescence spectra showed the annealing effect on ultrathin films and the enhanced defects luminescence were observed. We believe that these investigations will help improved understanding of essential physical chemistry and optoelectronic devices based on ultrathin oxide films for optical and photoelectric applications