Modeling the AgInSbTe Memristor

The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data

Making the decoy-state measurement-device-independent quantum key distribution practically useful

The relatively low key rate seems to be the major barrier to its practical use for the decoy state measurement device independent quantum key distribution (MDIQKD). We present a 4-intensity protocol for the decoy-state MDIQKD that hugely raises the key rate, especially in the case the total data size is not large. Also, calculation shows that our method makes it possible for secure private communication with {\em fresh} keys generated from MDIQKD with a delay time of only a few seconds.Comment: Typing errors corrected, presentation improve