Neural networks art: solving problems with multiple solutions and new teaching algorithm

A new discrete neural networks adaptive resonance theory (ART), which allows solving problems with multiple solutions, is developed. New algorithms neural networks teaching ART to prevent degradation and reproduction classes at training noisy input data is developed. Proposed learning algorithms discrete ART networks, allowing obtaining different classification methods of input

Circular-Polarization-Dependent Study of Microwave-Induced Conductivity Oscillations in a Two-Dimensional Electron Gas on Liquid Helium

The polarization dependence of photoconductivity response at cyclotron-resonance harmonics in a nondegenerate two-dimensional (2D) electron system formed on the surface of liquid helium is studied using a setup in which a circular polarization of opposite directions can be produced. Contrary to the results of similar investigations reported for semiconductor 2D electron systems, for electrons on liquid helium, a strong dependence of the amplitude of magnetoconductivity oscillations on the direction of circular polarization is observed. This observation is in accordance with theoretical models based on photon-assisted scattering and, therefore, it solves a critical issue in the dispute over the origin of microwave-induced conductivity oscillations.Comment: 5 pages, 4 figure

8-band k·p modelling of mid-infrared intersubband absorption in Ge quantum wells

The 8-band k·p parameters which include the direct band coupling between the conduction and the valence bands are derived and used to model optical intersubband transitions in Ge quantum well heterostructure material grown on Si substrates. Whilst for Si rich quantum wells the coupling between the conduction bands and valence bands is not important for accurate modelling, the present work demonstrates that the inclusion of such coupling is essential to accurately determine intersubband transitions between hole states in Ge and Ge-rich Si1− x Ge x quantum wells. This is due to the direct bandgap being far smaller in energy in Ge compared to Si. Compositional bowing parameters for a range of the key modelling input parameters required for Ge/SiGe heterostructures, including the Kane matrix elements, the effective mass of the Γ2'Γ2′ conduction band, and the Dresselhaus parameters for both 6- and 8-band k·p modelling, have been determined. These have been used to understand valence band intersubband transitions in a range of Ge quantum well intersubband photodetector devices in the mid-infrared wavelength range