PIANO: Proximity-based User Authentication on Voice-Powered Internet-of-Things Devices

Voice is envisioned to be a popular way for humans to interact with Internet-of-Things (IoT) devices. We propose a proximity-based user authentication method (called PIANO) for access control on such voice-powered IoT devices. PIANO leverages the built-in speaker, microphone, and Bluetooth that voice-powered IoT devices often already have. Specifically, we assume that a user carries a personal voice-powered device (e.g., smartphone, smartwatch, or smartglass), which serves as the user's identity. When another voice-powered IoT device of the user requires authentication, PIANO estimates the distance between the two devices by playing and detecting certain acoustic signals; PIANO grants access if the estimated distance is no larger than a user-selected threshold. We implemented a proof-of-concept prototype of PIANO. Through theoretical and empirical evaluations, we find that PIANO is secure, reliable, personalizable, and efficient.Comment: To appear in ICDCS'1

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. We attribute this to the opposite energy shift of states in different layers, which originates from the built-in electric field induced by the asymmetric charge transfer between two inner sublayers near the interface. Similar semiconductor to metal transitions are observed in other strained MA2Z4 bilayers, and the estimated critical pressures to realize such transitions are within the same order as semiconducting transition metal dichalcogenides. The semiconductor to metal transitions observed in the family of MA2Z4 bilayers present interesting possibilities for strain-induced engineering of their electronic properties