Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface

In order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2–3 pseudocubic unit cells at the coherently strained interface

Climate Change Preparedness: Comparing Future Urban Growth and Flood Risk in Amsterdam and Houston

Rising sea levels and coastal population growth will increase flood risk of more people and assets if land use changes are not planned adequately. This research examines the efficacy of flood protection systems and land use planning by comparing Amsterdam in the Netherlands (renown for resilience planning methods), with the city of Houston, Texas in the US (seeking ways of increasing resilience due to extreme recent flooding). It assesses flood risk of future urban growth in lieu of sea level rise using the Land Transformation Model, a Geographic Information Systems (GIS)-based Artificial Neural Network (ANN) land use prediction tool. Findings show that Houston has currently developed much more urban area within high-risk flood-prone zones compared to Amsterdam. When comparing predicted urban areas under risk, flood-prone future urban areas in Amsterdam are also relatively smaller than Houston. Finally, the increased floodplain when accounting for sea level rise will impact existing and future urban areas in Houston, but do not increase risk significantly in Amsterdam. The results suggest that the protective infrastructure used in the Netherlands has protected its future urban growth from sea level rise more adequately than has Houston

A Review of Driving Factors, Scenarios, and Topics in Urban Land Change Models

Due to the increase in future uncertainty caused by rapid environmental, societal, and technological change, exploring multiple scenarios has become increasingly important in urban planning. Land Change Modeling (LCM) enables planners to have the ability to mold uncertain future land changes into more determined conditions via scenarios. This paper reviews the literature on urban LCM and identifies driving factors, scenario themes/types, and topics. The results show that: (1) in total, 113 driving factors have been used in previous LCM studies including natural, built environment, and socio-economic factors, and this number ranges from three to twenty-one variables per model; (2) typical scenario themes include “environmental protection” and “compact development”; and (3) LCM topics are primarily growth prediction and prediction tools, and the rest are growth-related impact studies. The nature and number of driving factors vary across models and sites, and drivers are heavily determined by both urban context and theoretical framework

LaInO3/BaSnO3 polar interface on MgO substrates

We report on a new property of the LaInO3 (LIO)/(Ba,La)SnO3 (BLSO) polar interface using MgO substrates. The growth of well-formed LIO/BLSO interface structures on non-perovskite MgO substrates was confirmed by reciprocal space mapping image and transmission electron microscopy. Subsequently, we measured electrical properties as a function of the La doping rate of the BLSO layer and found that the LIO/BLSO polar interface shows conductance enhancement after the deposition of the polar LaInO3 layer on the BLSO layer, in agreement with our earlier results on SrTiO3 (STO) substrates. However, different electrical properties of the interfaces were found on MgO from those on STO substrates; we observed conductance enhancement even at the interface with undoped BaSnO3 (BSO) on the MgO substrates. We attribute such different behavior to the difference in the Fermi levels of BSO on MgO and STO substrates, either due to the larger donor density or the smaller acceptor density in BSO on MgO. Using such a nominally undoped interface, we fabricated the field effect transistors and presented their performances with Ion/Ioff ∼ 109

Transport Properties of the LaInO3/BaSnO3 Interface Analyzed by Poisson-Schrödinger Equation

2DEG systems formed in quantum wells of semiconductor heterostructures have been instrumental in advancing science and technology for many decades. Here, we report two unique transport properties of 2DEG formed at the interface of two perovskite oxides LaInO3 (LIO) and BaSnO3 (BSO): the peculiar LIO thickness dependence of the high two-dimensional (2D) carrier density (n2D) and the very narrow width of the quantum well. We analyze, via Poisson-Schrodinger simulation, how the various materials parameters affect the 2D carrier density and its profile when using the "interface-polarization" model in which the polarization exists only near the interface. Our simulations show that the known material parameters of LIO and BSO are capable of generating a deep and narrow quantum well as suggested by the experimental transport properties and reveal some distinct features of the LIO/BSO interface from the conventional 2DEGs. Furthermore, they predict how the LIO/BSO 2DEG will evolve as the defect density decreases.N

SmartPitcher [human motion tracking pitching machine]

The SmartPitcher by Auto Sports is a full-fledged ball pitching performance with an advanced technology that increases the quality and efficiency of sport training. It is a cooperation of ball trigger mechanism and motion tracking system that is essential to eliminate the process of loading ball cartridge. The firmly affixed mobile device on a user’s armband will interface with Bluetooth transmitter which will release a ball to the accelerated wheel, delivering the ball to where the user is standing. The first-perspective operating SmartPitcher is designed to bring easy, fast, reliable, and safe access for athletes to have convenience but expeditious exercise.&nbsp

ZnO thin-film transistor grown by rf sputtering using Zn metal target and oxidizer pulsing

We studied ZnO films grown by rf sputtering using Zn metal targets. During the growth the metal target can be at a metal or at an oxide mode, depending on oxidation of the target surface. At a metal mode the target surface is free of oxide, and the sputtering yield is higher, but deposited ZnO films show poor transistor characteristics. ZnO films deposited at an oxide mode show better transistor characteristics, but the sputtering yield is lower. In order to solve these problems, we supplied oxidizer gas as pulses during the growth. We hoped that the target condition could be controlled by varying parameters of the pulses. Our ZnO was grown at 450 degrees C using CO2 or O-2 as an oxidizer. After sputtering growth ZnO films were annealed in mixture of CO2 and H-2 at 400 degrees C. With these methods, bottom-gate ZnO thin-film transistor showed 6.5 cm(2)/Vsec mobility, 5 c 106 on/off ratio, and 1 5V threshold voltage. (C) 2017 The Ceramic Society of Japan. All rights reserved