Magetoresistance of RuO_2-based resistance thermometers below 0.3 K

We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger fields. The magnitude of the negative magnetoresistance increases rapidly as the temperature is lowered, while that of the positive magnetoresistance has smaller temperature dependence. We have also examined the temperature dependence of the resistance below 50 mK in zero magnetic field. It is described in the context of variable-range-hopping conduction down to 15 mK. Hence, the resistors can be used as thermometers down to at least 15 mK.Comment: 6 pages with 7 embedded figures. Published version (very minor changes

Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars

A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.Comment: Appl. Phys. Express, in pres

Sensitive germanium thermistors for cryogenic thermal detector of Tokyo dark matter search programme

Sensitive n-type and p-type germanium thermistors were fabricated by the melt doping technique and by the neutron transmutation doping (NTD) technique, respectively, aiming at a use for the cryogenic thermal detector, or bolometer of Tokyo dark matter search programme. We report on the measurements of the sensitivities of these thermistors. In particular, the p-type thermistors are sensitive enough to scale up our existing prototype LiF bolometer and realize a multiple array of the bolometers with the total absorber mass of about 1\,kg.Comment: 14 pages, revtex, with 4 postscript figures appended (uuencoded

Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

We have determined the localization length \xi and the impurity dielectric susceptibility \chi_{\rm imp} as a function of Ga acceptor concentrations (N) in nominally uncompensated ^{70}Ge:Ga just below the critical concentration (N_c) for the metal-insulator transition. Both \xi and \chi_{\rm imp} diverge at N_c according to the functions \xi\propto(1-N/N_c)^{-\nu} and \chi_{\rm imp}\propto(N_c/N-1)^{-\zeta}, respectively, with \nu=1.2\pm0.3 and \zeta=2.3\pm0.6 for 0.99N_c< N< N_c. Outside of this region (N<0.99N_c), the values of the exponents drop to \nu=0.33\pm0.03 and \zeta=0.62\pm0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N\approx0.99N_c.Comment: RevTeX, 4 pages with 5 embedded figures, final version (minor changes

Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio

8. Electronic Transport in Metallic Ge:Sb at Low Temperature(Experiments,I. Three Dimensional Systems)

この論文は国立情報学研究所の電子図書館事業により電子化されました。The metallic impurity conduction is a typical example of the transport in the disordered metal. It shows anomalous transport at low temperature. After the developement of the perturbation theory of transport in "weakly localized region", these anomalies are interpreted to be the appearance of the effects of localization and electron-electron interaction in dirty metal. The theories explain the characteristic features of temperature and magnetic field dependence of conductivity, but quantitatively there remain some disagreements between theory and experiment. In this paper, we report the measurement of low temperature transport properties in the metallic impurity conduction of Ge:Sb, especially stressing the anisotropy of magnetoconductance

ナノコンタクトを利用した微小領域のエネルギーフローと単分子磁石の研究

科学研究費助成事業 研究成果報告書：基盤研究(C)2012-2015課題番号 : 2454031