Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation

Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 {\mu}V/K, which is an order magnitude smaller than that of semiconductors (-198 {\mu}V/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.Comment: 11 pages, 4 figure

Brain Reorganization in Patients with Brachial Plexus Injury: A Longitudinal Functional MRI Study

The aim of this study is to assess plastic changes of the sensorimotor cortex (SMC) in patients with traumatic brachial plexus injury (BPI) using functional magnetic resonance imaging (fMRI). Twenty patients with traumatic BPI underwent fMRI using blood oxygen level-dependent technique with echo-planar imaging before the operation. Sixteen patients underwent their second fMRI at approximately one year after injury. The subjects performed two tasks: a flexion-extension task of the affected elbow and a task of the unaffected elbow. After activation, maps were generated, the number of significantly activated voxels in SMC contralateral to the elbow movement in the affected elbow task study (Naf) and that in the unaffected task study (Nunaf) were counted. An asymmetry index (AI) was calculated, where AI = (Naf − Nunaf)/(Naf + Nunaf). Ten healthy volunteers were also included in this fMRI study. The AI of the first fMRI of the patients with BPI was significantly lower than that of the healthy subjects (P = 0.035). The AI of the second fMRI significantly decreased compared with that of the first fMRI (P = 0.045). Brain reorganization associates with peripheral nervous changes after BPI and after operation for functional reconstruction

Signaling emotion in tagclouds

ABSTRACT In order to create more attractive tagclouds that get people interested in tagged content, we propose a simple but novel tagcloud where font size is determined by tag's entropy value, not the popularity to its content. Our method raises users' emotional interest in the content by emphasizing more emotional tags. Our initial experiments show that emotional tagclouds attract more attention than normal tagclouds at first look; thus they will enhance the role of tagcloud as a social signaller

Synthetic data generation method for hybrid image-tabular data using two generative adversarial networks

The generation of synthetic medical records using generative adversarial networks (GANs) has become increasingly important for addressing privacy concerns and promoting data sharing in the medical field. In this paper, we propose a novel method for generating synthetic hybrid medical records consisting of chest X-ray images (CXRs) and structured tabular data (including anthropometric data and laboratory tests) using an auto-encoding GAN ({\alpha}GAN) and a conditional tabular GAN (CTGAN). Our approach involves training a {\alpha}GAN model on a large public database (pDB) to reduce the dimensionality of CXRs. We then applied the trained encoder of the GAN model to the images in original database (oDB) to obtain the latent vectors. These latent vectors were combined with tabular data in oDB, and these joint data were used to train the CTGAN model. We successfully generated diverse synthetic records of hybrid CXR and tabular data, maintaining correspondence between them. We evaluated this synthetic database (sDB) through visual assessment, distribution of interrecord distances, and classification tasks. Our evaluation results showed that the sDB captured the features of the oDB while maintaining the correspondence between the images and tabular data. Although our approach relies on the availability of a large-scale pDB containing a substantial number of images with the same modality and imaging region as those in the oDB, this method has the potential for the public release of synthetic datasets without compromising the secondary use of data.Comment: 14 page

Evaluation of endometrial thickness in postmenopausal women by using 3.0-T MRI

Background: The accepted threshold for normal endometrial thickness is 5 mm; lesions with endometrial thickness 5 mm areconsidered malignant. However, endometrium ≥ 5 mm on transvaginal ultrasonography inpostmenopausal woman is considered as asymptomatic endometrial thickening. However, recent studies suggest that asymptomatic endometrial thickness of even 8 mm – 11 mm in postmenopausal women may be normal. Objectives: The present study investigated the normal endometrial thickness range in 297 asymptomatic postmenopausal women using 3.0-T magnetic resonance imaging (MRI) T2-weighted sagittal images measured retrospectively by a single radiologist. Method: The data were classified according to patient age and postmenopausal duration, and the medical records and follow-up MR images were reviewed to assess the clinical outcome. Results: The mean endometrial thickness was 2.4 ± 0.1 mm (range: 0.1–11.6). The endometriumin 21 of 297 subjects was ≥ 5 mm thick. Follow-up MR images were obtained in 17 of these 21 women, and their endometrial thickness was found to have decreased in all of them. To date,none of the subjects has been diagnosed with endometrial cancer. Conclusion: Although 5 mm is considered the conservative threshold of normal endometrial thickness on MRI of postmenopausal women, this figure should not, to avoid excessive false-positive diagnoses, be assumed as an indication of malignancy

Electric-Field Modulation of Thermopower for the KTaO3 Field Effect Transistors

We show herein fabrication and field-modulated thermopower for KTaO3 single-crystal based field-effect transistors (FETs). The KTaO3 FET exhibits field effect mobility of ~8 cm2/Vs, which is ~4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 microV/K by the application of gate electric field up to 1.5 MV/cm, ~400 microV/K below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.Comment: 13 pages, 4 figure