Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface

Quasi-two-dimensional perovskites have emerged as a new material platform for optoelectronics on account of its intrinsic stability. A major bottleneck to device performance is the high charge injection barrier caused by organic molecular layers on its basal plane, thus the best performing device currently relies on edge contact. Herein, by leveraging on van der Waals coupling and energy level matching between two-dimensional Ruddlesden-Popper perovskite and graphene, we show that the plane-contacted perovskite and graphene interface presents a lower barrier than gold for charge injection. Electron tunneling across the interface occurs via a gate-tunable, direct tunneling-to-field emission mechanism with increasing bias, and photoinduced charge transfer occurs at femtosecond timescale (~50 fs). Field effect transistors fabricated on molecularly thin Ruddlesden-Popper perovskite using graphene contact exhibit electron mobilities ranging from 0.1 to 0.018 cm2V−1s−1 between 1.7 to 200 K. Scanning tunneling spectroscopy studies reveal layer-dependent tunneling barrier and domain size on few-layered Ruddlesden-Popper perovskite.Fil: Leng, Kai. National University Of Singapore; SingapurFil: Wang, Lin. National University Of Singapore; SingapurFil: Shao, Yan. National University Of Singapore; SingapurFil: Abdelwahab, Ibrahim. National University Of Singapore; SingapurFil: Grinblat, Gustavo Sergio. Imperial College London; Reino Unido. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Verzhbitskiy, Ivan. National University Of Singapore; SingapurFil: Li, Runlai. National University Of Singapore; SingapurFil: Cai, Yongqing. University Of Macau; ChinaFil: Chi, Xiao. National University Of Singapore; SingapurFil: Fu, Wei. National University Of Singapore; SingapurFil: Song, Peng. National University Of Singapore; SingapurFil: Rusydi, Andrivo. National University Of Singapore; SingapurFil: Eda, Goki. National University Of Singapore; SingapurFil: Maier, Stefan A.. Ludwig Maximilians Universitat; AlemaniaFil: Loh, Kian Ping. National University Of Singapore; Singapu

Claudin-7 Is Frequently Overexpressed in Ovarian Cancer and Promotes Invasion

Background: Claudins are tight junction proteins that are involved in tight junction formation and function. Previous studies have shown that claudin-7 is frequently upregulated in epithelial ovarian cancer (EOC) along with claudin-3 and claudin-4. Here, we investigate in detail the expression patterns of claudin-7, as well as its possible functions in EOC. Methodology/Principal Findings: A total of 95 ovarian tissue samples (7 normal ovarian tissues, 65 serous carcinomas, 11 clear cell carcinomas, 8 endometrioid carcinomas and 4 mucinous carcinomas) were studied for claudin-7 expression. In real-time RT-PCR analysis, the gene for claudin-7, CLDN7, was found to be upregulated in all the tumor tissue samples studied. Similarly, immunohistochemical analysis and western blotting showed that claudin-7 protein was significantly overexpressed in the vast majority of EOCs. Small interfering RNA-mediated knockdown of claudin-7 in ovarian cancer cells led to significant changes in gene expression as measured by microarrays and validated by RT-PCR and immunoblotting. Analyses of the genes differentially expressed revealed that the genes altered in response to claudin-7 knockdown were associated with pathways implicated in various molecular and cellular functions such as cell cycle, cellular growth and proliferation, cell death, development, and cell movement. Through functional experiments in vitro, we found that both migration and invasion were altered in cells where CLDN7 had been knocked down or overexpressed. Interestingly, claudin-7 expression was associated with a net increase in invasion, but also with a decrease in migration

A Maximum Efficiency-86% Hybrid Power Modulator for 5G New Radio(NR) Applications

A hybrid power modulator is presented for the radio frequency (RF) power amplifiers of 5th generation mobile communication technology (5G) new radio (NR) applications. A hybrid power modulator utilizing a two-level switching converter and a broadband and high-efficiency linear amplifier is presented. A further improvement in the efficiency of the circuit is achieved by using an optimized supply voltage of the two-level switching converters of 4.5 V. In this way, the overall efficiency is improved by more than 5% compared to using a 5 V supply voltage. The linear amplifier consists of four stages. In order to improve bandwidth and circuit stability, a compensation circuit is added to the linear amplifier that eliminates the poles of the main amplifier by introducing additional zeros, indirectly pushing the pole distribution out of the bandwidth. Using this approach, the linear amplifier achieves a 3-dB bandwidth of 180 MHz and an efficiency of 51%. The hybrid power modulator achieves a maximum output power of 2.4 W and an efficiency of 86% when tracking a 100 MHz 5G-NR signal under a 4 Ω load in a 180 nm CMOS package

A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process

With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In this paper, a 7–13 GHz 10 W high-efficiency MMIC PA is designed. This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. To ensure high efficiency and a certain output power (Pout), both the driver–stage and power–stage transistors use a deep Class–AB bias. At the same time, in order to further improve the efficiency, low-loss and second–harmonic tuning techniques are used in the output and inter-stage matching networks, respectively. Finally, the electromagnetic simulation results show that within a frequency of 7–13 GHz, the amplifier achieves an average saturated continuous wave (CW) Pout of 40 dBm, a small signal gain of 14.5–15.5 dB, a power-added efficiency (PAE) of 30–46%, and the input and output return loss are better than 5 dB and 8 dB, respectively

A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process

With the increase in applications of the millimeter wave spectrum for phased array radar systems, mobile 7–13 communication systems, and satellite systems, the demand for a wideband, high-efficiency, high-power monolithic microwave integrated circuit (MMIC) power amplifier (PA) is increasing. In this paper, a 7–13 GHz 10 W high-efficiency MMIC PA is designed. This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. To ensure high efficiency and a certain output power (Pout), both the driver–stage and power–stage transistors use a deep Class–AB bias. At the same time, in order to further improve the efficiency, low-loss and second–harmonic tuning techniques are used in the output and inter-stage matching networks, respectively. Finally, the electromagnetic simulation results show that within a frequency of 7–13 GHz, the amplifier achieves an average saturated continuous wave (CW) Pout of 40 dBm, a small signal gain of 14.5–15.5 dB, a power-added efficiency (PAE) of 30–46%, and the input and output return loss are better than 5 dB and 8 dB, respectively

Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network

In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure. In order to improve the efficiency of the PA, a harmonic suppression network is added at the output of the drain artificial transmission line. At the same time, a capacitor is connected in series at the input of the gate, which is used to compensate for the phase offset of the gate and increase the cut-off frequency of the PA. The final gate width of the first stage is 0.56 μm, and the other three-stage gate widths are all 0.32 μm. Over the frequency range of 2–16 GHz, the simulated results of this NDPA exhibit a power-added efficiency (PAE) of 16.6–27%, a saturated continuous wave (CW) output power of 35–37 dBm, a small signal gain of 9.1–11.6 dB, and output return losses of 5–15 dB

Three-Level Hybrid Envelope Tracking Supply Modulator with High-Bandwidth Wide-Output-Swing

Envelope tracking is a dynamic supply modulation technique, which is mainly used to improve the efficiency of radio frequency power amplifier. For 5G NR mobile devices, this paper presents an envelope tracking supply modulator which is composed of a three-level switching converter and linear amplifier (LA) in parallel. The hysteresis control method is adopted in the supply modulator to improve the bandwidth of the switching converter and the loop response speed. At the same time, a rail-to-rail input-output class AB linear amplifier is designed to achieve a wide output swing and a super source follower is proposed to reduce the output impedance of LA. Designed with the 180 nm CMOS technology, the supply modulator operated at 5G NR 100 MHz envelope signal. The output power of the modulator reaches 1.5 W for a 6 Ω load resistor and the output swing is 4.3 V at 5.0 V supply, and the maximum efficiency reaches 85%

Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network

In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure. In order to improve the efficiency of the PA, a harmonic suppression network is added at the output of the drain artificial transmission line. At the same time, a capacitor is connected in series at the input of the gate, which is used to compensate for the phase offset of the gate and increase the cut-off frequency of the PA. The final gate width of the first stage is 0.56 μm, and the other three-stage gate widths are all 0.32 μm. Over the frequency range of 2–16 GHz, the simulated results of this NDPA exhibit a power-added efficiency (PAE) of 16.6–27%, a saturated continuous wave (CW) output power of 35–37 dBm, a small signal gain of 9.1–11.6 dB, and output return losses of 5–15 dB

Effect of Vertical Wind Shear on PM2.5 Changes over a Receptor Region in Central China

Vertical wind shear (VWS) significantly impacts the vertical mixing of air pollutants and leads to changes in near-surface air pollutants. We focused on Changsha (CS) and Jingmen (JM), the upstream and downstream urban sites of a receptor region in central China, to explore the impact of VWS on surface PM2.5 changes using 5-year wintertime observations and simulations from 2016–2020. The surface PM2.5 concentration was lower in CS with higher anthropogenic PM2.5 emissions than in JM, and the correlation between wind speed and PM2.5 was negative for clean conditions and positive for polluted conditions in both two sites. The difference in the correlation pattern of surface PM2.5 and VWS between CS and JM might be due to the different influences of regional PM2.5 transport and boundary layer dynamics. In downstream CS, the weak wind and VWS in the height of 1–2 km stabilized the ABL under polluted conditions, and strong northerly wind accompanied by enhanced VWS above 2 km favored the long-range transport of air pollutants. In upstream JM, local circulation and long-range PM2.5 transport co-determined the positive correlation between VWS and PM2.5 concentrations. Prevailed northerly wind disrupted the local circulation and enhanced the surface PM2.5 concentrations under polluted conditions, which tend to be an indicator of regional transport of air pollutants. The potential contribution source maps calculated from WRF-FLEXPART simulations also confirmed the more significant contribution of regional PM2.5 transport to the PM2.5 pollution in upstream region JM. By comparing the vertical profiles of meteorological parameters for typical transport- and local-type pollution days, the northerly wind prevailed throughout the ABL with stronger wind speed and VWS in transport-type pollution days, favoring the vertical mixing of transported air pollutants, in sharp contrast to the weak wind conditions in local-type pollution days. This study provided the evidence that PM2.5 pollution in the Twain-Hu Basin was affected by long-distance transport with different features at upstream and downstream sites, improving the understanding of the air pollutant source–receptor relationship in air quality changes with regional transport of air pollutants