1 research outputs found
Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly
One-dimensional (1D) nano/microwires
have attracted significant attention as promising building blocks
for various electronic and optical device applications. The integration
of these elements into functional device networks with controlled
alignment and density presents a significant challenge for practical
device applications. Here, we demonstrated the fabrication of wafer-scale
microwire field-effect transistor (FET) arrays based on well-aligned
inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO))
and organic polymeric insulator microwires fabricated via a simple
and large-area evaporative assembly technique. This microwire fabrication
method offers a facile approach to precisely manipulating the channel
dimensions of the FETs. The resulting solution-processed monolithic
IGZO microwire FETs exhibited a maximum electron mobility of 1.02
cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> and an
on/off current ratio of 1 × 10<sup>6</sup>. The appropriate choice
of the polymeric microwires used to define the channel lengths enabled
fine control over the threshold voltages of the devices, which were
employed to fabricate high-performance depletion-load inverters. Low-voltage-operated
microwire FETs were successfully fabricated on a plastic substrate
using a high-capacitance ion gel gate dielectric. The microwire fabrication
technique involving evaporative assembly provided a facile, effective,
and reliable method for preparing flexible large-area electronics