Study of an electro-optic modulator capable of generating simultaneous amplitude and phase modulations

We report on the analysis and prototype-characterization of a dual-electrode electro-optic modulator that can generate both amplitude and phase modulations with a selectable relative phase, termed a universally tunable modulator (UTM). All modulation states can be reached by tuning only the electrical inputs, facilitating real-time tuning, and the device is shown to have good suppression and stability properties. A mathematical analysis is presented, including the development of a geometric phase representation for modulation. The experimental characterization of the device shows that relative suppressions of 38 dB, 39 dB and 30 dB for phase, single-sideband and carrier-suppressed modulations, respectively, can be obtained, as well as showing the device is well-behaved when scanning continuously through the parameter space of modulations. Uses for the device are discussed, including the tuning of lock points in optical locking schemes, single sideband applications, modulation fast-switching applications, and applications requiring combined modulations.Comment: 12 pages, 8 figures, 1 tabl

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling. (C) 2013 Elsevier By. All rights reserved.JOURNAL OF CRYSTAL GROWTH. 393:42-44 (2014)journal articl

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved.JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012)journal articl