Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery

Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivityThis work has been partially supported by the Ministerio de Ciencia e Innovacion ´ of Spain (Project grants PID2020-112770RB-C22/MCIN/ AEI/10.13039/501100011033, PID2021-127033OB-C21/MCIN/AEI/ 10.13039/501100011033, and PID2021-127498NB-I00/AEI/FEDER/ 10.13039/501100011033). We also acknowledge financial support from MCIN/AEI/10.13039/501100011033, through the “María de Maeztu” Programme for Units of Excellence in R&D (CEX2018-000805- M), as well as from the Autonomous Community of Madrid through program S2018/NMT-4321 (NANOMAGCOST-CM

Process design for the manufacturing of soft X-ray gratings in single-crystal diamond by high-energy heavy-ion irradiation

The dataset that supports the findings of this study are archived in the Universidad Autónoma de Madrid data repository e‐cienciaDatos in https://doi.org/10.21950/ARZSJ1This paper describes in detail a novel manufacturing process for optical gratings suitable for use in the UV and soft X-ray regimes in a single-crystal diamond substrate based on highly focused swift heavy-ion irradiation. This type of grating is extensively used in light source facilities such as synchrotrons or free electron lasers, with ever-increasing demands in terms of thermal loads, depending on beamline operational parameters and architecture. The process proposed in this paper may be a future alternative to current manufacturing techniques, providing the advantage of being applicable to single-crystal diamond substrates, with their unique properties in terms of heat conductivity and radiation hardness. The paper summarizes the physical principle used for the grating patterns produced by swift heavy-ion irradiation and provides full details for the manufacturing process for a specific grating configuration, inspired in one of the beamlines at the ALBA synchrotron light source, while stressing the most challenging points for a potential implementation. Preliminary proof-of-concept experimental results are presented, showing the practical implementation of the methodology proposed herei