Contactless Characterization of Electronic Properties of Nanomaterials Using Dielectric Force Microscopy

Characterization of electronic properties of nanomaterials usually involves fabricating field effect transistors and deriving materials properties from device performance measurements. The difficulty in fabricating electrical contacts to extremely small-sized nanomaterials as well as the intrinsic heterogeneity of nanomaterials makes it a challenging task to measure the electronic properties of large numbers of individual nanomaterials. Here, we utilize a scanning probe technique, the dielectric force microscopy (DFM) to address the challenges. The DFM technique measures the low frequency dielectric response of nanomaterials, which is intrinsically related to their electrical conductivity. The incorporation of a gate bias voltage in DFM measurements allows for charge carrier density modulation, which is exploited to determine the carrier type in nanomaterials such as semiconducting single-walled carbon nanotubes (SWNTs) and ZnO nanowires (ZnO NWs). This technique avoids the need of electrical contacts and inherits the spatial mapping capability of scanning probe microscopy, as manifested in the imaging of intratube metallic/semiconducting junctions in SWNTs. We expect the DFM technique to find broad applications in the characterization of various nanoelectonic materials and nanodevices

Probing Electronic Doping of Single-Walled Carbon Nanotubes by Gaseous Ammonia with Dielectric Force Microscopy

The electronic properties of single-walled carbon nanotubes (SWNTs) are sensitive to the gas molecules adsorbed on nanotube sidewalls. It is imperative to investigate the interaction between SWNTs and gas molecules in order to understand the mechanism of SWNT-based gas-sensing devices or the stability of individual SWNT-based field effect transistors (FETs). To avoid the Schottky barrier at the metal/SWNT contact, which dominates the performance of SWNT-based FETs, we utilize a contactless technique, dielectric force microscopy (DFM), to study the intrinsic interaction between SWNTs and gaseous ammonia molecules. Results show that gaseous ammonia affects the conductivity of semiconducting SWNTs but not metallic SWNTs. Semiconducting SWNTs, which are p-type doped in air, show suppressed hole concentration in ammonia gas and are even inverted to n-type doping in some cases

Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes

To assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engineering approach. This procedure eliminates the formation of dislocations in the heterostructure. Top-gated Hall bar devices are fabricated to enable magnetoresistivity and Hall effect measurements. Both Shubnikov-de Haas oscillations and the quantum Hall effect are observed at low temperatures, demonstrating the formation of high-quality 2DEGs. Values of charge carrier mobility as a function of carrier density extracted from these measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates. In all samples, impurity scattering appears to limit the mobility