1 research outputs found
Oxygen Vacancy Induced Atom-Level Interface in Z‑Scheme SnO<sub>2</sub>/SnNb<sub>2</sub>O<sub>6</sub> Heterojunctions for Robust Solar-Driven CO<sub>2</sub> Conversion
The modulation of Z-scheme charge
transfer is essential
for efficient
heterostructure toward photocatalytic CO2 reduction. However,
constructing a compact hetero-interface favoring the Z-scheme charge
transfer remains a great challenge. In this work, an interfacial Nb–O–Sn
bond and built-in electric field-modulated Z-scheme Ov-SnO2/SnNb2O6 heterojunction was prepared
for efficient photocatalytic CO2 conversion. Systematic
investigations reveal that an atomic-level interface is constructed
in the Ov-SnO2/SnNb2O6 heterojunction. Under simulated sunlight irradiation, the obtained
Ov-SnO2/SnNb2O6 photocatalyst
exhibits a high CO evolution rate of 147.4 μmol h–1 g–1 from CO2 reduction, which is around
3-fold and 3.3-fold of SnO2/SnNb2O6 composite and pristine SnNb2O6, respectively,
and favorable cyclability by retaining 95.8% rate retention after
five consecutive tests. As determined by electron paramagnetic resonance
spectra, in situ Fourier transform infrared spectra, and density functional
theory calculations, Nb–O–Sn bonds and built-in electric
field induced by the addition of oxygen vacancies jointly accelerate
the Z-scheme charge transfer for enhanced photocatalytic performance.
This work provides a promising route for consciously modulating Z-scheme
charge transfer by atomic-level interface engineering to boost photocatalytic
performance