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Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer
In
this article, we propose a novel approach to demonstrate tunable
photoinduced carrier transport of a few-layered black phosphorus (BP)
field-effect transistor (FET) with extended air stability using a
“light-sensitized ultrathin encapsulated layer”. Titanium
suboxide (TiO<sub>x</sub>) ultrathin film (approximately 3 nm), which
is an amorphous phase of crystalline TiO<sub>2</sub> and can be solution
processed, simultaneously exhibits the unique dual functions of passivation
and photoinduced doping on a BP FET. The photoinduced electron transfer
at TiO<sub>x</sub>/BP interfaces provides tunable n-type doping on
BP through light illumination. Accordingly, the intrinsic hole-dominated
transport of BP can be gradually tuned to the electron-dominated transport
at a TiO<sub>x</sub>/BP FET using light modulation, with enhanced
electron mobility and extended air stability of the device. The novel
device structure consisting of a light-sensitized encapsulated layer
with controllable and reversible doping through light illumination
on BP exhibits great potential for the future development of stable
BP-based semiconductor logic devices or optoelectronic devices