Wet Etching of Silicon in Planar Nanochannels

Silicon (Si) alkaline etching constitutes a fundamental process in the semiconductor industry. Although its etching kinetics on plain substrates have been thoroughly investigated, the kinetics of Si wet etching in nanoconfinements have yet to be fully explored despite its practical importance in three-dimensional (3-D) semiconductor manufacturing. Herein, we report the systematic study of potassium hydroxide (KOH) wet etching kinetics of amorphous silicon (a-Si)-filled two-dimensional (2-D) planar nanochannels. Our findings reveal that the etching rate would increase with the increase in nanochannel height before reaching a plateau, indicating a strong nonlinear confinement effect. Through investigation using etching solutions with different ionic strengths and/or different temperatures, we further find that both electrostatic interactions and the hydration layer inside the nanoconfinement contribute to the confinement-dependent etching kinetics. Our results offer fresh perspectives into the kinetic study of reactions in nanoconfinements and will shed light on the optimization of etching processes in the semiconductor industry